High-κEu₂O₃ and Y₂O₃ poly-Si thin-film transistor nonvolatile memory devices

Keyphrases

• Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs) 100%
• Yttrium Oxide 100%
• Non-volatile Memory 100%
• Eu2O3 100%
• LTPS TFT 75%
• Memory Device 50%
• Charge Trapping Layer 50%
• Transistor Memory 50%
• Charge Trapping 25%
• Fowler-Nordheim 25%
• Low Subthreshold Swing 25%
• Charge Loss 25%
• Large Memory Window 25%
• Band-to-band Tunneling 25%
• Hot-hole Injection 25%
• High Charge 25%
• Endurance Performance 25%
• Device Use 25%
• Trapping Efficiency 25%
• Y2O3 Film 25%

Material Science

• Thin-Film Transistor 100%
• Film 75%
• Silicon 75%
• Charge Trapping 75%