High-κEu₂O₃ and Y₂O₃ poly-Si thin-film transistor nonvolatile memory devices

In this paper, we have successfully fabricated low-temperature polycrystalline silicon thin-film transistor (LTPS-TFT) nonvolatile memory devices employing high-κEu₂O₃ and Y ₂O₃ films as the charge trapping layer. The LTPS-TFT memory device uses band-to-band tunneling-induced hot hole injection and gate Fowler-Nordheim injection as the program and erase methods, respectively. Compared with the Y₂O₃ film, the LTPS-TFT memory device using an Eu₂O₃ charge-trapping layer exhibited a lower subthreshold swing and a larger memory window, a smaller charge loss, and a better endurance performance, presumably because of the higher charge-trapping efficiency of the Eu₂O₃ film.