HfO2 and Lanthanide-doped HfO2 MIM Capacitors for RF/Mixed IC Applications

Sun Jung Kim; Byung Jin Cho; Ming Fu Li; Chunxiang Zhu; Albert Chin; Dim Lee Kwong

doi:10.1109/VLSIT.2003.1221094

HfO₂ and Lanthanide-doped HfO₂ MIM Capacitors for RF/Mixed IC Applications

Sun Jung Kim^*, Byung Jin Cho, Ming Fu Li, Chunxiang Zhu, Albert Chin, Dim Lee Kwong

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

54 Scopus citations

Abstract

We demonstrate high quality HfO₂metal-insulator-metal (MIM) capacitors with a high capacitance of 4.7 fF/cm² and a leakage current density of less than 10^-8 A/cm², meeting ITRS requirement for analog precision capacitor applications. In addition, we demonstrate that doping HfO₂ with Lanthanide (Tb) at an optimum concentration improves both voltage linearity and leakage current density of HfO₂ MIM capacitor, allowing further reduction of insulator thickness and achieving a capacitance density of 13.3 fF/μm² with leakage current meeting requirements for RF bypass capacitors applications. These values are superior to that reported in the literature, suggesting the potential use of these dielectrics for future RF/mixed signal IC applications.

Original language	English
Pages (from-to)	77-78
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.2003.1221094
State	Published - 2003
Event	2003 Symposium on VLSI Technology - Kyoto, Japan Duration: 10 Jun 2003 → 12 Jun 2003

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title = "HfO2 and Lanthanide-doped HfO2 MIM Capacitors for RF/Mixed IC Applications",

abstract = "We demonstrate high quality HfO2metal-insulator-metal (MIM) capacitors with a high capacitance of 4.7 fF/cm2 and a leakage current density of less than 10-8 A/cm2, meeting ITRS requirement for analog precision capacitor applications. In addition, we demonstrate that doping HfO2 with Lanthanide (Tb) at an optimum concentration improves both voltage linearity and leakage current density of HfO2 MIM capacitor, allowing further reduction of insulator thickness and achieving a capacitance density of 13.3 fF/μm2 with leakage current meeting requirements for RF bypass capacitors applications. These values are superior to that reported in the literature, suggesting the potential use of these dielectrics for future RF/mixed signal IC applications.",

author = "Kim, {Sun Jung} and Cho, {Byung Jin} and Li, {Ming Fu} and Chunxiang Zhu and Albert Chin and Kwong, {Dim Lee}",

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language = "English",

pages = "77--78",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 Symposium on VLSI Technology ; Conference date: 10-06-2003 Through 12-06-2003",

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TY - JOUR

T1 - HfO2 and Lanthanide-doped HfO2 MIM Capacitors for RF/Mixed IC Applications

AU - Kim, Sun Jung

AU - Cho, Byung Jin

AU - Li, Ming Fu

AU - Zhu, Chunxiang

AU - Chin, Albert

AU - Kwong, Dim Lee

PY - 2003

Y1 - 2003

N2 - We demonstrate high quality HfO2metal-insulator-metal (MIM) capacitors with a high capacitance of 4.7 fF/cm2 and a leakage current density of less than 10-8 A/cm2, meeting ITRS requirement for analog precision capacitor applications. In addition, we demonstrate that doping HfO2 with Lanthanide (Tb) at an optimum concentration improves both voltage linearity and leakage current density of HfO2 MIM capacitor, allowing further reduction of insulator thickness and achieving a capacitance density of 13.3 fF/μm2 with leakage current meeting requirements for RF bypass capacitors applications. These values are superior to that reported in the literature, suggesting the potential use of these dielectrics for future RF/mixed signal IC applications.

AB - We demonstrate high quality HfO2metal-insulator-metal (MIM) capacitors with a high capacitance of 4.7 fF/cm2 and a leakage current density of less than 10-8 A/cm2, meeting ITRS requirement for analog precision capacitor applications. In addition, we demonstrate that doping HfO2 with Lanthanide (Tb) at an optimum concentration improves both voltage linearity and leakage current density of HfO2 MIM capacitor, allowing further reduction of insulator thickness and achieving a capacitance density of 13.3 fF/μm2 with leakage current meeting requirements for RF bypass capacitors applications. These values are superior to that reported in the literature, suggesting the potential use of these dielectrics for future RF/mixed signal IC applications.

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DO - 10.1109/VLSIT.2003.1221094

M3 - Conference article

AN - SCOPUS:0141538337

SN - 0743-1562

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EP - 78

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - 2003 Symposium on VLSI Technology

Y2 - 10 June 2003 through 12 June 2003

ER -

HfO₂ and Lanthanide-doped HfO₂ MIM Capacitors for RF/Mixed IC Applications

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