HfO 2 MIS capacitor with copper gate electrode

Tsu Hsiu Perng; Chao-Hsin Chien; Ching Wei Chen; Ming Jui Yang; Peer Lehnen; Chun Yen Chang; Tiao Yuan Huang

doi:10.1109/LED.2004.839221

HfO ₂ MIS capacitor with copper gate electrode

Tsu Hsiu Perng^*, Chao-Hsin Chien, Ching Wei Chen, Ming Jui Yang, Peer Lehnen, Chun Yen Chang, Tiao Yuan Huang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Metal-insulator-semiconductor capacitors were fabricated using atomic vapor deposition HfO₂ dielectric with sputtered copper (Cu) and aluminum (Al) gate electrodes. The counterparts with SiO₂ dielectric were also fabricated for comparison. Bias-temperature stress and charge-to-breakdown (Q_BD) test were conducted to examine the stability and reliability of these capacitors. In contrast with the high Cu drift rate in an SiO₂ dielectric, Cu in contact with HfO₂ seems to be very stable. The HfO₂ capacitors with a Cu-gate also depict higher capacitance without showing any reliability degradation, compared to the Al-gate counterparts. These results indicate that HfO₂ with its considerably high density of 9.68 g/cm³ is acting as a good barrier to Cu diffusion, and it thus appears feasible to integrate Cu metal with the post-gate-dielectric ultralarge-scale integration manufacturing processes.

Original language	English
Pages (from-to)	784-786
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	25
Issue number	12
DOIs	https://doi.org/10.1109/LED.2004.839221
State	Published - Dec 2004

Keywords

Bias-temperature stress
Copper-gate (Cu-gate) electrode
Hafnium dioxide (HfO)

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10.1109/LED.2004.839221

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title = "HfO 2 MIS capacitor with copper gate electrode",

abstract = "Metal-insulator-semiconductor capacitors were fabricated using atomic vapor deposition HfO2 dielectric with sputtered copper (Cu) and aluminum (Al) gate electrodes. The counterparts with SiO2 dielectric were also fabricated for comparison. Bias-temperature stress and charge-to-breakdown (QBD) test were conducted to examine the stability and reliability of these capacitors. In contrast with the high Cu drift rate in an SiO2 dielectric, Cu in contact with HfO2 seems to be very stable. The HfO2 capacitors with a Cu-gate also depict higher capacitance without showing any reliability degradation, compared to the Al-gate counterparts. These results indicate that HfO2 with its considerably high density of 9.68 g/cm3 is acting as a good barrier to Cu diffusion, and it thus appears feasible to integrate Cu metal with the post-gate-dielectric ultralarge-scale integration manufacturing processes.",

keywords = "Bias-temperature stress, Copper-gate (Cu-gate) electrode, Hafnium dioxide (HfO)",

author = "Perng, {Tsu Hsiu} and Chao-Hsin Chien and Chen, {Ching Wei} and Yang, {Ming Jui} and Peer Lehnen and Chang, {Chun Yen} and Huang, {Tiao Yuan}",

year = "2004",

month = dec,

doi = "10.1109/LED.2004.839221",

language = "English",

volume = "25",

pages = "784--786",

journal = "Ieee Electron Device Letters",

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T1 - HfO 2 MIS capacitor with copper gate electrode

AU - Perng, Tsu Hsiu

AU - Chien, Chao-Hsin

AU - Chen, Ching Wei

AU - Yang, Ming Jui

AU - Lehnen, Peer

AU - Chang, Chun Yen

AU - Huang, Tiao Yuan

PY - 2004/12

Y1 - 2004/12

N2 - Metal-insulator-semiconductor capacitors were fabricated using atomic vapor deposition HfO2 dielectric with sputtered copper (Cu) and aluminum (Al) gate electrodes. The counterparts with SiO2 dielectric were also fabricated for comparison. Bias-temperature stress and charge-to-breakdown (QBD) test were conducted to examine the stability and reliability of these capacitors. In contrast with the high Cu drift rate in an SiO2 dielectric, Cu in contact with HfO2 seems to be very stable. The HfO2 capacitors with a Cu-gate also depict higher capacitance without showing any reliability degradation, compared to the Al-gate counterparts. These results indicate that HfO2 with its considerably high density of 9.68 g/cm3 is acting as a good barrier to Cu diffusion, and it thus appears feasible to integrate Cu metal with the post-gate-dielectric ultralarge-scale integration manufacturing processes.

AB - Metal-insulator-semiconductor capacitors were fabricated using atomic vapor deposition HfO2 dielectric with sputtered copper (Cu) and aluminum (Al) gate electrodes. The counterparts with SiO2 dielectric were also fabricated for comparison. Bias-temperature stress and charge-to-breakdown (QBD) test were conducted to examine the stability and reliability of these capacitors. In contrast with the high Cu drift rate in an SiO2 dielectric, Cu in contact with HfO2 seems to be very stable. The HfO2 capacitors with a Cu-gate also depict higher capacitance without showing any reliability degradation, compared to the Al-gate counterparts. These results indicate that HfO2 with its considerably high density of 9.68 g/cm3 is acting as a good barrier to Cu diffusion, and it thus appears feasible to integrate Cu metal with the post-gate-dielectric ultralarge-scale integration manufacturing processes.

KW - Bias-temperature stress

KW - Copper-gate (Cu-gate) electrode

KW - Hafnium dioxide (HfO)

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U2 - 10.1109/LED.2004.839221

DO - 10.1109/LED.2004.839221

M3 - Article

AN - SCOPUS:10644270027

SN - 0741-3106

VL - 25

SP - 784

EP - 786

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 12

ER -

HfO ₂ MIS capacitor with copper gate electrode

Abstract

Keywords

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