HfO 2 MIS capacitor with copper gate electrode

Tsu Hsiu Perng*, Chao-Hsin Chien, Ching Wei Chen, Ming Jui Yang, Peer Lehnen, Chun Yen Chang, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Metal-insulator-semiconductor capacitors were fabricated using atomic vapor deposition HfO2 dielectric with sputtered copper (Cu) and aluminum (Al) gate electrodes. The counterparts with SiO2 dielectric were also fabricated for comparison. Bias-temperature stress and charge-to-breakdown (QBD) test were conducted to examine the stability and reliability of these capacitors. In contrast with the high Cu drift rate in an SiO2 dielectric, Cu in contact with HfO2 seems to be very stable. The HfO2 capacitors with a Cu-gate also depict higher capacitance without showing any reliability degradation, compared to the Al-gate counterparts. These results indicate that HfO2 with its considerably high density of 9.68 g/cm3 is acting as a good barrier to Cu diffusion, and it thus appears feasible to integrate Cu metal with the post-gate-dielectric ultralarge-scale integration manufacturing processes.

Original languageEnglish
Pages (from-to)784-786
Number of pages3
JournalIeee Electron Device Letters
Issue number12
StatePublished - Dec 2004


  • Bias-temperature stress
  • Copper-gate (Cu-gate) electrode
  • Hafnium dioxide (HfO)


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