Keyphrases
Low Power
100%
Thin-film Transistors
100%
Atomically Thin
100%
Heterogeneous Integration
100%
Indium Tungsten Oxide
100%
Monolithic 3-D (M3-D)
100%
Complementary Inverter
100%
Oxide Transistor
100%
N-channel
66%
Inverter
66%
P-channel
66%
Semiconductor Technology
66%
Vertically Stacked
66%
Polysilicon
33%
On-state Current
33%
Electrical Characteristics
33%
Supply Voltage
33%
Low Voltage
33%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
33%
Atomic Layers
33%
Current Ratio
33%
Subthreshold Swing
33%
High Voltage Gain
33%
High Energy Efficiency
33%
Low Leakage Current
33%
Complementary Metal Oxide Semiconductor
33%
Passivation Layer
33%
High Stability
33%
Technology Application
33%
Low Contact Resistance
33%
Small Hysteresis
33%
Energy Band Gap
33%
High Mobility
33%
Channel Thickness
33%
Thin Channel
33%
Planar Structure
33%
Noise Margin
33%
Static Power Consumption
33%
Low Footprint
33%
DEC1
33%
Picowatt
33%
Next-generation Semiconductor
33%
Complementary Field-effect Transistors
33%
Material Science
Transistor
100%
Oxide Compound
100%
Thin-Film Transistor
100%
Indium
100%
Tungsten
100%
Silicon
50%
Density
25%
Electrical Property
25%
Field Effect Transistor
25%
Electronic Circuit
25%
Contact Resistance
25%
Engineering
Thin-Film Transistor
100%
Inverter
100%
Supply Voltage
50%
Polysilicon
50%
Field-Effect Transistor
25%
Electric Power Utilization
25%
Current Ratio
25%
Atomic Layer
25%
Passivation Layer
25%
Technology Application
25%
Noise Margin
25%
High Energy Efficiency
25%
Planar Structure
25%
Band Gap
25%