Harsh photovoltaics using InGaN/GaN multiple quantum well schemes

Der Hsien Lien; Yu Hsuan Hsiao; Shih Guo Yang; Meng Lin Tsai; Tzu Chiao Wei; Si Chen Lee; Jr Hau He

doi:10.1016/j.nanoen.2014.10.013

Harsh photovoltaics using InGaN/GaN multiple quantum well schemes

Der Hsien Lien, Yu Hsuan Hsiao, Shih Guo Yang, Meng Lin Tsai, Tzu Chiao Wei, Si Chen Lee^*, Jr Hau He

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

Harvesting solar energy at extremely harsh environments is of practical interest for building a self-powered harsh electronic system. However, working at high temperature and radiative environments adversely affects the performance of conventional solar cells. To improve the performance, GaN-based multiple quantum wells (MQWs) are introduced into the solar cells. The implementation of MQWs enables improved efficiency (+0.52%/K) and fill factor (+0.35%/K) with elevated temperature and shows excellent reliability under high-temperature operation. In addition, the GaN-based solar cell exhibits superior radiation robustness (lifetime >30 years under solar storm proton irradiation) due to their strong atomic bonding and direct-bandgap characteristics. This solar cell employing MQW nanostructures provides valuable routes for future developments in self-powered harsh electronics.

Original language	English
Pages (from-to)	104-109
Number of pages	6
Journal	Nano Energy
Volume	11
DOIs	https://doi.org/10.1016/j.nanoen.2014.10.013
State	Published - 1 Jan 2015

Keywords

GaN
Harsh electronics
Quantum well
Solar cell

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.nanoen.2014.10.013

Cite this

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title = "Harsh photovoltaics using InGaN/GaN multiple quantum well schemes",

abstract = "Harvesting solar energy at extremely harsh environments is of practical interest for building a self-powered harsh electronic system. However, working at high temperature and radiative environments adversely affects the performance of conventional solar cells. To improve the performance, GaN-based multiple quantum wells (MQWs) are introduced into the solar cells. The implementation of MQWs enables improved efficiency (+0.52%/K) and fill factor (+0.35%/K) with elevated temperature and shows excellent reliability under high-temperature operation. In addition, the GaN-based solar cell exhibits superior radiation robustness (lifetime >30 years under solar storm proton irradiation) due to their strong atomic bonding and direct-bandgap characteristics. This solar cell employing MQW nanostructures provides valuable routes for future developments in self-powered harsh electronics.",

keywords = "GaN, Harsh electronics, Quantum well, Solar cell",

author = "Lien, {Der Hsien} and Hsiao, {Yu Hsuan} and Yang, {Shih Guo} and Tsai, {Meng Lin} and Wei, {Tzu Chiao} and Lee, {Si Chen} and He, {Jr Hau}",

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journal = "Nano Energy",

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TY - JOUR

T1 - Harsh photovoltaics using InGaN/GaN multiple quantum well schemes

AU - Lien, Der Hsien

AU - Hsiao, Yu Hsuan

AU - Yang, Shih Guo

AU - Tsai, Meng Lin

AU - Wei, Tzu Chiao

AU - Lee, Si Chen

AU - He, Jr Hau

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Harvesting solar energy at extremely harsh environments is of practical interest for building a self-powered harsh electronic system. However, working at high temperature and radiative environments adversely affects the performance of conventional solar cells. To improve the performance, GaN-based multiple quantum wells (MQWs) are introduced into the solar cells. The implementation of MQWs enables improved efficiency (+0.52%/K) and fill factor (+0.35%/K) with elevated temperature and shows excellent reliability under high-temperature operation. In addition, the GaN-based solar cell exhibits superior radiation robustness (lifetime >30 years under solar storm proton irradiation) due to their strong atomic bonding and direct-bandgap characteristics. This solar cell employing MQW nanostructures provides valuable routes for future developments in self-powered harsh electronics.

AB - Harvesting solar energy at extremely harsh environments is of practical interest for building a self-powered harsh electronic system. However, working at high temperature and radiative environments adversely affects the performance of conventional solar cells. To improve the performance, GaN-based multiple quantum wells (MQWs) are introduced into the solar cells. The implementation of MQWs enables improved efficiency (+0.52%/K) and fill factor (+0.35%/K) with elevated temperature and shows excellent reliability under high-temperature operation. In addition, the GaN-based solar cell exhibits superior radiation robustness (lifetime >30 years under solar storm proton irradiation) due to their strong atomic bonding and direct-bandgap characteristics. This solar cell employing MQW nanostructures provides valuable routes for future developments in self-powered harsh electronics.

KW - GaN

KW - Harsh electronics

KW - Quantum well

KW - Solar cell

UR - http://www.scopus.com/inward/record.url?scp=84911415307&partnerID=8YFLogxK

U2 - 10.1016/j.nanoen.2014.10.013

DO - 10.1016/j.nanoen.2014.10.013

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SN - 2211-2855

VL - 11

SP - 104

EP - 109

JO - Nano Energy

JF - Nano Energy

ER -

Harsh photovoltaics using InGaN/GaN multiple quantum well schemes

Abstract

Keywords

UN SDGs

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