Growth temperature reduction for isoelectronic As-doped GaN

Wen Hsiung Lee; Huai Ying Huang; Wei Chung Chen; Chiung Fen Lee; Wei-Kuo Chen; Wen Hsiung Chen; Ming Chih Lee

doi:10.1143/jjap.42.l239

Growth temperature reduction for isoelectronic As-doped GaN

Wen Hsiung Lee^*, Huai Ying Huang, Wei Chung Chen, Chiung Fen Lee, Wei-Kuo Chen, Wen Hsiung Chen, Ming Chih Lee

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Letter › peer-review

Abstract

As-doped GaN films were grown at different temperatures by atmospheric metalorganic chemical vapor deposition. A higher electron Hall mobility, narrower line width in photoluminescence, and longer spatial correlation length of the filmes were obtainable at low growth temperatures compared to undoped GaN grown at the same temperatures as a result of isoelectronic As-doping.

Original language	English
Pages (from-to)	L239-L242
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	42
Issue number	3 A
DOIs	https://doi.org/10.1143/jjap.42.l239
State	Published - 1 Mar 2003

Keywords

GaN
Hall mobility
Isoelectronic As-doping
Photoluminescence
Raman scattering
Spatial correlation length

Access to Document

10.1143/jjap.42.l239

Cite this

@article{de9b4d0c93b64052a0ff5dc145211057,

title = "Growth temperature reduction for isoelectronic As-doped GaN",

abstract = "As-doped GaN films were grown at different temperatures by atmospheric metalorganic chemical vapor deposition. A higher electron Hall mobility, narrower line width in photoluminescence, and longer spatial correlation length of the filmes were obtainable at low growth temperatures compared to undoped GaN grown at the same temperatures as a result of isoelectronic As-doping.",

keywords = "GaN, Hall mobility, Isoelectronic As-doping, Photoluminescence, Raman scattering, Spatial correlation length",

author = "Lee, {Wen Hsiung} and Huang, {Huai Ying} and Chen, {Wei Chung} and Lee, {Chiung Fen} and Wei-Kuo Chen and Chen, {Wen Hsiung} and Lee, {Ming Chih}",

year = "2003",

month = mar,

day = "1",

doi = "10.1143/jjap.42.l239",

language = "English",

volume = "42",

pages = "L239--L242",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3 A",

}

TY - JOUR

T1 - Growth temperature reduction for isoelectronic As-doped GaN

AU - Lee, Wen Hsiung

AU - Huang, Huai Ying

AU - Chen, Wei Chung

AU - Lee, Chiung Fen

AU - Chen, Wei-Kuo

AU - Chen, Wen Hsiung

AU - Lee, Ming Chih

PY - 2003/3/1

Y1 - 2003/3/1

N2 - As-doped GaN films were grown at different temperatures by atmospheric metalorganic chemical vapor deposition. A higher electron Hall mobility, narrower line width in photoluminescence, and longer spatial correlation length of the filmes were obtainable at low growth temperatures compared to undoped GaN grown at the same temperatures as a result of isoelectronic As-doping.

AB - As-doped GaN films were grown at different temperatures by atmospheric metalorganic chemical vapor deposition. A higher electron Hall mobility, narrower line width in photoluminescence, and longer spatial correlation length of the filmes were obtainable at low growth temperatures compared to undoped GaN grown at the same temperatures as a result of isoelectronic As-doping.

KW - GaN

KW - Hall mobility

KW - Isoelectronic As-doping

KW - Photoluminescence

KW - Raman scattering

KW - Spatial correlation length

UR - http://www.scopus.com/inward/record.url?scp=0038398928&partnerID=8YFLogxK

U2 - 10.1143/jjap.42.l239

DO - 10.1143/jjap.42.l239

M3 - Letter

AN - SCOPUS:0038398928

SN - 0021-4922

VL - 42

SP - L239-L242

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 3 A

ER -

Growth temperature reduction for isoelectronic As-doped GaN

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this