Growth of optical-quality, uniform In-rich InGaN films using two-heater metal-organic chemical vapor deposition

Keyphrases

• Metal-organic Chemical Vapor Deposition (MOCVD) 100%
• Indium Gallium Nitride (InGaN) 100%
• InGaN Films 100%
• Peak Wavelength 100%
• Heater 100%
• Optical Quality 100%
• In-rich 100%
• Depositional System 50%
• Wafer 50%
• Epilayer 50%
• Gas Phase 50%
• Optical Properties 50%
• Emission Peak 50%
• In Content 50%
• Substrate Temperature 50%
• Growth Temperature 50%
• Uniformly Distributed 50%
• InxGa1-xN 50%
• Parasitic Reactions 50%
• Ceiling Temperature 50%

Engineering

• Metal Organic Chemical Vapor Deposition 100%
• Optical Quality 100%
• Phase Composition 100%
• Deposition System 50%
• Gas-Phase 50%
• Substrate Temperature 50%
• Emission Peak 50%
• Growth Temperature 50%
• Ceiling Temperature 50%

Material Science

• Film 100%
• Metal-Organic Chemical Vapor Deposition 100%
• Phase Composition 66%
• Epilayers 33%
• Optical Property 33%
• Linewidth 33%