Growth of optical-quality, uniform In-rich InGaN films using two-heater metal-organic chemical vapor deposition

S. F. Fu; C. Y. Chen; F. W. Li; C. H. Hsu; Wu-Ching Chou; Wen-Hao Chang; Wei-Kuo Chen; W. C. Ke

doi:10.1016/j.jcrysgro.2013.07.030

Growth of optical-quality, uniform In-rich InGaN films using two-heater metal-organic chemical vapor deposition

S. F. Fu, C. Y. Chen, F. W. Li, C. H. Hsu, Wu-Ching Chou, Wen-Hao Chang, Wei-Kuo Chen^*, W. C. Ke

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Good-optical-quality, thick In_xGa_1-xN films with high In content were grown using a homemade two-heater metal-organic chemical vapor deposition system. By varying the growth temperature, it was found that the In composition of the InGaN epilayer varied from 18 to 59% as the substrate temperature decreased from 750 to 625 C. Our results show that the optical properties in terms of the emission peak wavelength and linewidth are uniformly distributed throughout the entire 2 in. wafer for the x=0.40 InGaN sample. The resultant mean peak wavelength and FWHM are 808±6 nm and 229±18 meV, respectively, at 18 K. In addition, for the InGaN film grown at 625 C, a noticeable decrease in the In composition occurred when the ceiling temperature was >800 C, indicative of the occurrence of parasitic reactions in the gas phase.

Original language	English
Pages (from-to)	106-111
Number of pages	6
Journal	Journal of Crystal Growth
Volume	383
DOIs	https://doi.org/10.1016/j.jcrysgro.2013.07.030
State	Published - 15 Nov 2013

Keywords

A1. X-ray diffraction
A2. Metal-organic vapor phase epitaxy
B1. Nitrides
B2. Semiconducting indium compounds

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10.1016/j.jcrysgro.2013.07.030

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@article{d267258ed1194d939c37facf64e39959,

title = "Growth of optical-quality, uniform In-rich InGaN films using two-heater metal-organic chemical vapor deposition",

abstract = "Good-optical-quality, thick InxGa1-xN films with high In content were grown using a homemade two-heater metal-organic chemical vapor deposition system. By varying the growth temperature, it was found that the In composition of the InGaN epilayer varied from 18 to 59% as the substrate temperature decreased from 750 to 625 C. Our results show that the optical properties in terms of the emission peak wavelength and linewidth are uniformly distributed throughout the entire 2 in. wafer for the x=0.40 InGaN sample. The resultant mean peak wavelength and FWHM are 808±6 nm and 229±18 meV, respectively, at 18 K. In addition, for the InGaN film grown at 625 C, a noticeable decrease in the In composition occurred when the ceiling temperature was >800 C, indicative of the occurrence of parasitic reactions in the gas phase.",

keywords = "A1. X-ray diffraction, A2. Metal-organic vapor phase epitaxy, B1. Nitrides, B2. Semiconducting indium compounds",

author = "Fu, {S. F.} and Chen, {C. Y.} and Li, {F. W.} and Hsu, {C. H.} and Wu-Ching Chou and Wen-Hao Chang and Wei-Kuo Chen and Ke, {W. C.}",

year = "2013",

month = nov,

day = "15",

doi = "10.1016/j.jcrysgro.2013.07.030",

language = "English",

volume = "383",

pages = "106--111",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Growth of optical-quality, uniform In-rich InGaN films using two-heater metal-organic chemical vapor deposition

AU - Fu, S. F.

AU - Chen, C. Y.

AU - Li, F. W.

AU - Hsu, C. H.

AU - Chou, Wu-Ching

AU - Chang, Wen-Hao

AU - Chen, Wei-Kuo

AU - Ke, W. C.

PY - 2013/11/15

Y1 - 2013/11/15

N2 - Good-optical-quality, thick InxGa1-xN films with high In content were grown using a homemade two-heater metal-organic chemical vapor deposition system. By varying the growth temperature, it was found that the In composition of the InGaN epilayer varied from 18 to 59% as the substrate temperature decreased from 750 to 625 C. Our results show that the optical properties in terms of the emission peak wavelength and linewidth are uniformly distributed throughout the entire 2 in. wafer for the x=0.40 InGaN sample. The resultant mean peak wavelength and FWHM are 808±6 nm and 229±18 meV, respectively, at 18 K. In addition, for the InGaN film grown at 625 C, a noticeable decrease in the In composition occurred when the ceiling temperature was >800 C, indicative of the occurrence of parasitic reactions in the gas phase.

AB - Good-optical-quality, thick InxGa1-xN films with high In content were grown using a homemade two-heater metal-organic chemical vapor deposition system. By varying the growth temperature, it was found that the In composition of the InGaN epilayer varied from 18 to 59% as the substrate temperature decreased from 750 to 625 C. Our results show that the optical properties in terms of the emission peak wavelength and linewidth are uniformly distributed throughout the entire 2 in. wafer for the x=0.40 InGaN sample. The resultant mean peak wavelength and FWHM are 808±6 nm and 229±18 meV, respectively, at 18 K. In addition, for the InGaN film grown at 625 C, a noticeable decrease in the In composition occurred when the ceiling temperature was >800 C, indicative of the occurrence of parasitic reactions in the gas phase.

KW - A1. X-ray diffraction

KW - A2. Metal-organic vapor phase epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting indium compounds

UR - http://www.scopus.com/inward/record.url?scp=84884559413&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2013.07.030

DO - 10.1016/j.jcrysgro.2013.07.030

M3 - Article

AN - SCOPUS:84884559413

SN - 0022-0248

VL - 383

SP - 106

EP - 111

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Growth of optical-quality, uniform In-rich InGaN films using two-heater metal-organic chemical vapor deposition

Abstract

Keywords

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