Growth of GaN on patterned sapphire substrate with high-index facets

Sheng Chieh Chang, Chien Chih Chen, Tsu Chi Chang, Kun Lin Lin, Tien-Chang Lu, Li Chang, Yew-Chuhg Wu

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Periodic pyramidal array patterned sapphire substrate (PSS) with various inclined facets was fabricated by wet etching. It was found that {34-17}, {41-3-18}, and {123-5} facets are exposed on the PSS structure after etching. GaN grown on the PSS by metal-organic chemical vapor deposition was found to have a semi-polar orientation by structural characterization with scanning and transmission electron microscopy. Also, the results show that GaN is mainly grown on the {123-5} sapphire facet with the orientation relationship between GaN and sapphire as (011-4-)GaN // (33-06-)sapphire and [022-1]GaN // [112-0]sapphire, and the dislocation density in the grown GaN decreased with thickness. In addition, photoluminescence and catholuminescence measurements show only strong near-band-edge emission from the semi-polar GaN on the {123-5} sapphire facet.

Original languageEnglish
Pages (from-to)R159-R161
Number of pages3
JournalECS Journal of Solid State Science and Technology
Issue number12
StatePublished - 1 Jan 2015


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