Abstract
Hydrazine has been used as a nitrogen source for the organometallic vapor phase deposition of GaN using trimethylgallium and a nitrogen carrier gas in the temperature range 425-960°C. Hydrazine and trimethylgallium form an adduct at room temperature which decomposes over the substrate with an activation energy of 1 eV for temperatures below 650°C. No carbon has been detected by Auger spectroscopy in the films. The electrical properties are dominated by oxygen impurities, probably originating from the hydrazine. Since hydrazine readily decomposes above 400°C, it is a better source of nitrogen for low-temperature depositions than other, more stable nitrogen sources.
Original language | English |
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Pages (from-to) | 1449-1451 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 48 |
Issue number | 21 |
DOIs | |
State | Published - 1986 |