Growth of GaAs on SiOx by molecular-beam epitaxy

Albert Chin; Pallab K. Bhattacharya; G. P. Kothiyal

doi:10.1063/1.339855

Growth of GaAs on SiO_x by molecular-beam epitaxy

Albert Chin^*, Pallab K. Bhattacharya, G. P. Kothiyal

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We have investigated the molecular-beam epitaxial growth and photoluminescence properties of GaAs on SiO_x. It is seen that material with a grain size of 0.6-0.8 μm can be grown directly on the dielectric. The properties improve further when the layers are short-term annealed with a halogen lamp. Optimum grain sizes of 1.6 μm are obtained when the as-grown material is annealed at 950°C for 10 s, and very strong luminescence is observed in the same material. Photoconductive detectors made on the overgrown GaAs show large responsivities.

Original language	English
Pages (from-to)	1416-1419
Number of pages	4
Journal	Journal of Applied Physics
Volume	62
Issue number	4
DOIs	https://doi.org/10.1063/1.339855
State	Published - 1 Dec 1987

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abstract = "We have investigated the molecular-beam epitaxial growth and photoluminescence properties of GaAs on SiOx. It is seen that material with a grain size of 0.6-0.8 μm can be grown directly on the dielectric. The properties improve further when the layers are short-term annealed with a halogen lamp. Optimum grain sizes of 1.6 μm are obtained when the as-grown material is annealed at 950°C for 10 s, and very strong luminescence is observed in the same material. Photoconductive detectors made on the overgrown GaAs show large responsivities.",

author = "Albert Chin and Bhattacharya, {Pallab K.} and Kothiyal, {G. P.}",

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AU - Chin, Albert

AU - Bhattacharya, Pallab K.

AU - Kothiyal, G. P.

PY - 1987/12/1

Y1 - 1987/12/1

N2 - We have investigated the molecular-beam epitaxial growth and photoluminescence properties of GaAs on SiOx. It is seen that material with a grain size of 0.6-0.8 μm can be grown directly on the dielectric. The properties improve further when the layers are short-term annealed with a halogen lamp. Optimum grain sizes of 1.6 μm are obtained when the as-grown material is annealed at 950°C for 10 s, and very strong luminescence is observed in the same material. Photoconductive detectors made on the overgrown GaAs show large responsivities.

AB - We have investigated the molecular-beam epitaxial growth and photoluminescence properties of GaAs on SiOx. It is seen that material with a grain size of 0.6-0.8 μm can be grown directly on the dielectric. The properties improve further when the layers are short-term annealed with a halogen lamp. Optimum grain sizes of 1.6 μm are obtained when the as-grown material is annealed at 950°C for 10 s, and very strong luminescence is observed in the same material. Photoconductive detectors made on the overgrown GaAs show large responsivities.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Growth of GaAs on SiO_x by molecular-beam epitaxy

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