Growth of GaAs on SiOx by molecular-beam epitaxy

Albert Chin*, Pallab K. Bhattacharya, G. P. Kothiyal

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


We have investigated the molecular-beam epitaxial growth and photoluminescence properties of GaAs on SiOx. It is seen that material with a grain size of 0.6-0.8 μm can be grown directly on the dielectric. The properties improve further when the layers are short-term annealed with a halogen lamp. Optimum grain sizes of 1.6 μm are obtained when the as-grown material is annealed at 950°C for 10 s, and very strong luminescence is observed in the same material. Photoconductive detectors made on the overgrown GaAs show large responsivities.

Original languageEnglish
Pages (from-to)1416-1419
Number of pages4
JournalJournal of Applied Physics
Issue number4
StatePublished - 1 Dec 1987


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