Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation

Jih Shang Hwang*, Tai Yan Liu, Surjit Chattopadhyay, Geng Ming Hsu, Antonio M. Basilio, Han Wei Chen, Yu Kuei Hsu, Wen Hsun Tu, Yan Gu Lin, Kuei Hsien Chen, Chien Cheng Li, Sheng Bo Wang, Hsin Yi Chen, Li Chyong Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


Enhanced photoelectrochemical (PEC) performances of Ga2O3 and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga2O3 and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga2O3 NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga2O3. These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga2O3 NWs, or by incorporation of indium to form InGaN NWs.

Original languageEnglish
Article number055401
Issue number5
StatePublished - 8 Feb 2013


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