Growth and optical properties of high-density InN nanodots

W. C. Ke; S. J. Lee; C. Y. Kao; Wei-Kuo Chen; Wu-Ching Chou; M. C. Lee; Wen-Hao Chang; W. J. Lin; Y. C. Cheng; T. C. Lee; J. C. Lin

doi:10.1016/j.jcrysgro.2010.07.044

Growth and optical properties of high-density InN nanodots

W. C. Ke, S. J. Lee, C. Y. Kao, Wei-Kuo Chen, Wu-Ching Chou, M. C. Lee, Wen-Hao Chang, W. J. Lin, Y. C. Cheng, T. C. Lee, J. C. Lin

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

High density InN/GaN nanodots were grown by pulsed mode (PM) metalorganic chemical vapor deposition (MOCVD). InN nanodots density of up to ∼5×10¹⁰ cm^-2 at a growth temperature of 550 °C was achieved. The high diffusion activation energy of 2.65 eV due to high NH₃ flow rate generated more reactive nitrogen adatoms on the growth surface, and is believed to be the main reason for the growth of high density InN nanodots. In addition, an anomalous temperature dependence of the PL peak energy was observed for high density InN nanodots. The high carrier concentration, due to high In vacancy (V_In) in the InN nanodots, thermally agitated to the conduction band. As the measurement temperature increased, the increase of Fermi energy resulted in blue-shifted PL peak energy. From the Arrhenius plot of integrated PL intensity, the thermal activation energy for the PM grown InN nanodots was estimated to be E_a∼51 meV, indicating strong localization of carriers in the high density InN nanodots.

Original language	English
Pages (from-to)	3209-3213
Number of pages	5
Journal	Journal of Crystal Growth
Volume	312
Issue number	21
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.07.044
State	Published - 15 Oct 2010

Keywords

A1. Nanostructures
A3. Metalorganic chemical vapor deposition
B1. InN
B2. Semiconducting indium compounds

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10.1016/j.jcrysgro.2010.07.044

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title = "Growth and optical properties of high-density InN nanodots",

abstract = "High density InN/GaN nanodots were grown by pulsed mode (PM) metalorganic chemical vapor deposition (MOCVD). InN nanodots density of up to ∼5×1010 cm-2 at a growth temperature of 550 °C was achieved. The high diffusion activation energy of 2.65 eV due to high NH3 flow rate generated more reactive nitrogen adatoms on the growth surface, and is believed to be the main reason for the growth of high density InN nanodots. In addition, an anomalous temperature dependence of the PL peak energy was observed for high density InN nanodots. The high carrier concentration, due to high In vacancy (VIn) in the InN nanodots, thermally agitated to the conduction band. As the measurement temperature increased, the increase of Fermi energy resulted in blue-shifted PL peak energy. From the Arrhenius plot of integrated PL intensity, the thermal activation energy for the PM grown InN nanodots was estimated to be Ea∼51 meV, indicating strong localization of carriers in the high density InN nanodots.",

keywords = "A1. Nanostructures, A3. Metalorganic chemical vapor deposition, B1. InN, B2. Semiconducting indium compounds",

author = "Ke, {W. C.} and Lee, {S. J.} and Kao, {C. Y.} and Wei-Kuo Chen and Wu-Ching Chou and Lee, {M. C.} and Wen-Hao Chang and Lin, {W. J.} and Cheng, {Y. C.} and Lee, {T. C.} and Lin, {J. C.}",

year = "2010",

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doi = "10.1016/j.jcrysgro.2010.07.044",

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T1 - Growth and optical properties of high-density InN nanodots

AU - Ke, W. C.

AU - Lee, S. J.

AU - Kao, C. Y.

AU - Chen, Wei-Kuo

AU - Chou, Wu-Ching

AU - Lee, M. C.

AU - Chang, Wen-Hao

AU - Lin, W. J.

AU - Cheng, Y. C.

AU - Lee, T. C.

AU - Lin, J. C.

PY - 2010/10/15

Y1 - 2010/10/15

N2 - High density InN/GaN nanodots were grown by pulsed mode (PM) metalorganic chemical vapor deposition (MOCVD). InN nanodots density of up to ∼5×1010 cm-2 at a growth temperature of 550 °C was achieved. The high diffusion activation energy of 2.65 eV due to high NH3 flow rate generated more reactive nitrogen adatoms on the growth surface, and is believed to be the main reason for the growth of high density InN nanodots. In addition, an anomalous temperature dependence of the PL peak energy was observed for high density InN nanodots. The high carrier concentration, due to high In vacancy (VIn) in the InN nanodots, thermally agitated to the conduction band. As the measurement temperature increased, the increase of Fermi energy resulted in blue-shifted PL peak energy. From the Arrhenius plot of integrated PL intensity, the thermal activation energy for the PM grown InN nanodots was estimated to be Ea∼51 meV, indicating strong localization of carriers in the high density InN nanodots.

AB - High density InN/GaN nanodots were grown by pulsed mode (PM) metalorganic chemical vapor deposition (MOCVD). InN nanodots density of up to ∼5×1010 cm-2 at a growth temperature of 550 °C was achieved. The high diffusion activation energy of 2.65 eV due to high NH3 flow rate generated more reactive nitrogen adatoms on the growth surface, and is believed to be the main reason for the growth of high density InN nanodots. In addition, an anomalous temperature dependence of the PL peak energy was observed for high density InN nanodots. The high carrier concentration, due to high In vacancy (VIn) in the InN nanodots, thermally agitated to the conduction band. As the measurement temperature increased, the increase of Fermi energy resulted in blue-shifted PL peak energy. From the Arrhenius plot of integrated PL intensity, the thermal activation energy for the PM grown InN nanodots was estimated to be Ea∼51 meV, indicating strong localization of carriers in the high density InN nanodots.

KW - A1. Nanostructures

KW - A3. Metalorganic chemical vapor deposition

KW - B1. InN

KW - B2. Semiconducting indium compounds

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ER -

Growth and optical properties of high-density InN nanodots

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