Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition

Shih Chen Chen, Dan Hua Hsieh, Hsin Jiang, Yu Kuang Liao, Fang I. Lai, Chyong-Hua Chen, Chih-Wei Luo, Jenh-Yih Juang, Yu Lun Chueh*, Kaung-Hsiung Wu, Hao-Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

In this work, CuIn1-xGaxSe2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu2-xSe, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD.

Original languageEnglish
Article number280
Pages (from-to)1-7
Number of pages7
JournalNanoscale Research Letters
Volume9
Issue number1
DOIs
StatePublished - 2 Jun 2014

Keywords

  • CIGS
  • Femtosecond
  • Photoluminescence
  • Pulsed laser deposition
  • Pump probe
  • EVAPORATION
  • ABLATION
  • CUINSE2

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