Green Poly-Si TFTs: RF Breakthroughs (f{rm{T}}/f{\max}= 63.6/30\ \text{GHz}) by an Ingenious Process Design for IoT Modules on Everything

Y. J. Ye, P. H. Yu, C. K. Lee, P. W. Li, K. M. Chen, G. W. Huang, H. C. Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

We report an ingenious, low-Temperature process platform for the fabrication of high-performance RF poly-Si TFTs with cut-off frequency (f{rm{T}}) of 63.6 GHz and maximum oscillation frequency (f{\max}) of 30 GHz, the highest values ever reported in poly-Si devices. The superior RF performance is achieved by an exquisite combination of large-grain poly-Si channel, T-shaped gate, sidewall air-spacers, and silicide electrodes, using nanosecond-pulsed green laser anneal, high etching selectivity, novel silicidation process by design, and microwave annealing for S/D dopant activation. Our reported poly-Si TFTs are a strong competitor against standard 0.35\mu rm{r} SOI CMOS devices, enabling a viable, cost-effective approach for a vast landscape of IoT and More-Than-Moore applications.

Original languageEnglish
Title of host publication2021 IEEE International Electron Devices Meeting, IEDM 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages4.3.1-4.3.4
ISBN (Electronic)9781665425728
DOIs
StatePublished - 2021
Event2021 IEEE International Electron Devices Meeting, IEDM 2021 - San Francisco, United States
Duration: 11 Dec 202116 Dec 2021

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2021-December
ISSN (Print)0163-1918

Conference

Conference2021 IEEE International Electron Devices Meeting, IEDM 2021
Country/TerritoryUnited States
CitySan Francisco
Period11/12/2116/12/21

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