Green InGaN/GaN Multiple-Quantum-Wells With Pre-Layer for High-Efficiency Mini-LEDs

Shouqiang Lai; Chaohsu Lai; Saijun Li; Guolong Chen; Xi Zheng; Tingwei Lu; Zongming Lin; Rongxing Wu; Yijun Lu; Hao Chung Kuo; Zhong Chen; Tingzhu Wu

doi:10.1109/LED.2023.3264983

Green InGaN/GaN Multiple-Quantum-Wells With Pre-Layer for High-Efficiency Mini-LEDs

Shouqiang Lai, Chaohsu Lai, Saijun Li, Guolong Chen, Xi Zheng, Tingwei Lu, Zongming Lin, Rongxing Wu, Yijun Lu, Hao Chung Kuo, Zhong Chen^*, Tingzhu Wu^*

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this study, we investigated the temperature-dependent photoluminescence characteristics of green InGaN/GaN multiple quantum wells (MQWs) with InGaN/GaN pre-wells and InGaN pre-layers, and the electroluminescence properties of the corresponding mini-LEDs were fabricated and studied. According to the fitting results of the temperature-dependent photoluminescence spectra obtained by the Vaishini and Arrhenius models, the S-shaped temperature-dependent peak energies of green InGaN/GaN MQWs grown on pre-wells and pre-layers indicated that these peaks originated from the localized state, and better crystal quality could be found in the MQWs with pre-layers. Moreover, we compared the electroluminescence properties of green mini-LEDs. These results demonstrate the advantages of growing green MQWs with an InGaN prelayer.

Original language	English
Pages (from-to)	907-910
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	44
Issue number	6
DOIs	https://doi.org/10.1109/LED.2023.3264983
State	Published - 1 Jun 2023

Keywords

InGaN
efficiency
green mini-LED
pre-wells
prelayer

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title = "Green InGaN/GaN Multiple-Quantum-Wells With Pre-Layer for High-Efficiency Mini-LEDs",

abstract = "In this study, we investigated the temperature-dependent photoluminescence characteristics of green InGaN/GaN multiple quantum wells (MQWs) with InGaN/GaN pre-wells and InGaN pre-layers, and the electroluminescence properties of the corresponding mini-LEDs were fabricated and studied. According to the fitting results of the temperature-dependent photoluminescence spectra obtained by the Vaishini and Arrhenius models, the S-shaped temperature-dependent peak energies of green InGaN/GaN MQWs grown on pre-wells and pre-layers indicated that these peaks originated from the localized state, and better crystal quality could be found in the MQWs with pre-layers. Moreover, we compared the electroluminescence properties of green mini-LEDs. These results demonstrate the advantages of growing green MQWs with an InGaN prelayer.",

keywords = "InGaN, efficiency, green mini-LED, pre-wells, prelayer",

author = "Shouqiang Lai and Chaohsu Lai and Saijun Li and Guolong Chen and Xi Zheng and Tingwei Lu and Zongming Lin and Rongxing Wu and Yijun Lu and Kuo, {Hao Chung} and Zhong Chen and Tingzhu Wu",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2023",

month = jun,

day = "1",

doi = "10.1109/LED.2023.3264983",

language = "English",

volume = "44",

pages = "907--910",

journal = "Ieee Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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TY - JOUR

T1 - Green InGaN/GaN Multiple-Quantum-Wells With Pre-Layer for High-Efficiency Mini-LEDs

AU - Lai, Shouqiang

AU - Lai, Chaohsu

AU - Li, Saijun

AU - Chen, Guolong

AU - Zheng, Xi

AU - Lu, Tingwei

AU - Lin, Zongming

AU - Wu, Rongxing

AU - Lu, Yijun

AU - Kuo, Hao Chung

AU - Chen, Zhong

AU - Wu, Tingzhu

PY - 2023/6/1

Y1 - 2023/6/1

N2 - In this study, we investigated the temperature-dependent photoluminescence characteristics of green InGaN/GaN multiple quantum wells (MQWs) with InGaN/GaN pre-wells and InGaN pre-layers, and the electroluminescence properties of the corresponding mini-LEDs were fabricated and studied. According to the fitting results of the temperature-dependent photoluminescence spectra obtained by the Vaishini and Arrhenius models, the S-shaped temperature-dependent peak energies of green InGaN/GaN MQWs grown on pre-wells and pre-layers indicated that these peaks originated from the localized state, and better crystal quality could be found in the MQWs with pre-layers. Moreover, we compared the electroluminescence properties of green mini-LEDs. These results demonstrate the advantages of growing green MQWs with an InGaN prelayer.

AB - In this study, we investigated the temperature-dependent photoluminescence characteristics of green InGaN/GaN multiple quantum wells (MQWs) with InGaN/GaN pre-wells and InGaN pre-layers, and the electroluminescence properties of the corresponding mini-LEDs were fabricated and studied. According to the fitting results of the temperature-dependent photoluminescence spectra obtained by the Vaishini and Arrhenius models, the S-shaped temperature-dependent peak energies of green InGaN/GaN MQWs grown on pre-wells and pre-layers indicated that these peaks originated from the localized state, and better crystal quality could be found in the MQWs with pre-layers. Moreover, we compared the electroluminescence properties of green mini-LEDs. These results demonstrate the advantages of growing green MQWs with an InGaN prelayer.

KW - InGaN

KW - efficiency

KW - green mini-LED

KW - pre-wells

KW - prelayer

UR - http://www.scopus.com/inward/record.url?scp=85153389195&partnerID=8YFLogxK

U2 - 10.1109/LED.2023.3264983

DO - 10.1109/LED.2023.3264983

M3 - Article

AN - SCOPUS:85153389195

SN - 0741-3106

VL - 44

SP - 907

EP - 910

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 6

ER -

Green InGaN/GaN Multiple-Quantum-Wells With Pre-Layer for High-Efficiency Mini-LEDs

Abstract

Keywords

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