Green InGaN/GaN Multiple-Quantum-Wells With Pre-Layer for High-Efficiency Mini-LEDs

Shouqiang Lai, Chaohsu Lai, Saijun Li, Guolong Chen, Xi Zheng, Tingwei Lu, Zongming Lin, Rongxing Wu, Yijun Lu, Hao Chung Kuo, Zhong Chen*, Tingzhu Wu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


In this study, we investigated the temperature-dependent photoluminescence characteristics of green InGaN/GaN multiple quantum wells (MQWs) with InGaN/GaN pre-wells and InGaN pre-layers, and the electroluminescence properties of the corresponding mini-LEDs were fabricated and studied. According to the fitting results of the temperature-dependent photoluminescence spectra obtained by the Vaishini and Arrhenius models, the S-shaped temperature-dependent peak energies of green InGaN/GaN MQWs grown on pre-wells and pre-layers indicated that these peaks originated from the localized state, and better crystal quality could be found in the MQWs with pre-layers. Moreover, we compared the electroluminescence properties of green mini-LEDs. These results demonstrate the advantages of growing green MQWs with an InGaN prelayer.

Original languageEnglish
Pages (from-to)907-910
Number of pages4
JournalIeee Electron Device Letters
Issue number6
StatePublished - 1 Jun 2023


  • efficiency
  • green mini-LED
  • InGaN
  • pre-wells
  • prelayer


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