Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

Chih Pin Lin; Li Syuan Lyu; Ching Ting Lin; Pang Shiuan Liu; Wen-Hao Chang; Lain Jong Li; Tuo-Hung Hou

doi:10.1109/IPFA.2015.7224436

Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

Chih Pin Lin, Li Syuan Lyu, Ching Ting Lin, Pang Shiuan Liu, Wen-Hao Chang, Lain Jong Li, Tuo-Hung Hou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.

Original language	English
Title of host publication	Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	476-479
Number of pages	4
ISBN (Electronic)	9781479999286, 9781479999286
DOIs	https://doi.org/10.1109/IPFA.2015.7224436
State	Published - 29 Jun 2015
Event	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan Duration: 29 Jun 2015 → 2 Jul 2015

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2015-August

Conference

Conference	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
Country/Territory	Taiwan
City	Hsinchu
Period	29/06/15 → 2/07/15

Access to Document

10.1109/IPFA.2015.7224436

Cite this

Lin, C. P., Lyu, L. S., Lin, C. T., Liu, P. S., Chang, W-H., Li, L. J., & Hou, T-H. (2015). Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping. In Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 (pp. 476-479). Article 7224436 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2015.7224436

Lin, Chih Pin ; Lyu, Li Syuan ; Lin, Ching Ting et al. / Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping. Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 476-479 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{2e12d80d9bbc4ac7bc0d973e5cba7a13,

title = "Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping",

abstract = "We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.",

author = "Lin, {Chih Pin} and Lyu, {Li Syuan} and Lin, {Ching Ting} and Liu, {Pang Shiuan} and Wen-Hao Chang and Li, {Lain Jong} and Tuo-Hung Hou",

year = "2015",

month = jun,

day = "29",

doi = "10.1109/IPFA.2015.7224436",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "476--479",

booktitle = "Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015",

address = "United States",

note = "22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 ; Conference date: 29-06-2015 Through 02-07-2015",

}

Lin, CP, Lyu, LS, Lin, CT, Liu, PS, Chang, W-H, Li, LJ & Hou, T-H 2015, Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping. in Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015., 7224436, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. 476-479, 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015, Hsinchu, Taiwan, 29/06/15. https://doi.org/10.1109/IPFA.2015.7224436

Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping. / Lin, Chih Pin; Lyu, Li Syuan; Lin, Ching Ting et al.
Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 476-479 7224436 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

AU - Lin, Chih Pin

AU - Lyu, Li Syuan

AU - Lin, Ching Ting

AU - Liu, Pang Shiuan

AU - Chang, Wen-Hao

AU - Li, Lain Jong

AU - Hou, Tuo-Hung

PY - 2015/6/29

Y1 - 2015/6/29

N2 - We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.

AB - We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.

UR - http://www.scopus.com/inward/record.url?scp=84949804995&partnerID=8YFLogxK

U2 - 10.1109/IPFA.2015.7224436

DO - 10.1109/IPFA.2015.7224436

M3 - Conference contribution

AN - SCOPUS:84949804995

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

SP - 476

EP - 479

BT - Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015

Y2 - 29 June 2015 through 2 July 2015

ER -

Lin CP, Lyu LS, Lin CT, Liu PS, Chang W-H, Li LJ et al. Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping. In Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 476-479. 7224436. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2015.7224436

Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this