Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide

Chih Pin Lin; Ching Ting Lin; Pang Shiuan Liu; Ming Jiue Yu; Tuo-Hung Hou

doi:10.1109/NANO.2016.7751338

Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide

Chih Pin Lin, Ching Ting Lin, Pang Shiuan Liu, Ming Jiue Yu, Tuo-Hung Hou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Transition metal dichalcogenide (TMD)-based field effect transistors are currently being actively researched as a post-silicon solution for integrated circuits. This paper discusses two of the major challenges: grain size in polycrystalline TMD monolayer films and chemical doping to improve TMD/metal contacts. The characterization techniques and the correlation with device electrical characteristics are investigated.

Original language	English
Title of host publication	16th International Conference on Nanotechnology - IEEE NANO 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	501-504
Number of pages	4
ISBN (Electronic)	9781509039142
DOIs	https://doi.org/10.1109/NANO.2016.7751338
State	Published - 24 Aug 2016
Event	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan Duration: 22 Aug 2016 → 25 Aug 2016

Publication series

Name	16th International Conference on Nanotechnology - IEEE NANO 2016

Conference

Conference	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Country/Territory	Japan
City	Sendai
Period	22/08/16 → 25/08/16

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10.1109/NANO.2016.7751338

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Lin, C. P., Lin, C. T., Liu, P. S., Yu, M. J., & Hou, T.-H. (2016). Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 501-504). Article 7751338 (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751338

@inproceedings{8d5f367fd65f4ec2b10274fe84b03e95,

title = "Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide",

abstract = "Transition metal dichalcogenide (TMD)-based field effect transistors are currently being actively researched as a post-silicon solution for integrated circuits. This paper discusses two of the major challenges: grain size in polycrystalline TMD monolayer films and chemical doping to improve TMD/metal contacts. The characterization techniques and the correlation with device electrical characteristics are investigated.",

author = "Lin, {Chih Pin} and Lin, {Ching Ting} and Liu, {Pang Shiuan} and Yu, {Ming Jiue} and Tuo-Hung Hou",

year = "2016",

month = aug,

day = "24",

doi = "10.1109/NANO.2016.7751338",

language = "English",

series = "16th International Conference on Nanotechnology - IEEE NANO 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "501--504",

booktitle = "16th International Conference on Nanotechnology - IEEE NANO 2016",

address = "美國",

note = "16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 ; Conference date: 22-08-2016 Through 25-08-2016",

}

Lin, CP, Lin, CT, Liu, PS, Yu, MJ & Hou, T-H 2016, Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide. in 16th International Conference on Nanotechnology - IEEE NANO 2016., 7751338, 16th International Conference on Nanotechnology - IEEE NANO 2016, Institute of Electrical and Electronics Engineers Inc., pp. 501-504, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, Sendai, Japan, 22/08/16. https://doi.org/10.1109/NANO.2016.7751338

Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide. / Lin, Chih Pin; Lin, Ching Ting; Liu, Pang Shiuan et al.
16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 501-504 7751338 (16th International Conference on Nanotechnology - IEEE NANO 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide

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AU - Hou, Tuo-Hung

PY - 2016/8/24

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N2 - Transition metal dichalcogenide (TMD)-based field effect transistors are currently being actively researched as a post-silicon solution for integrated circuits. This paper discusses two of the major challenges: grain size in polycrystalline TMD monolayer films and chemical doping to improve TMD/metal contacts. The characterization techniques and the correlation with device electrical characteristics are investigated.

AB - Transition metal dichalcogenide (TMD)-based field effect transistors are currently being actively researched as a post-silicon solution for integrated circuits. This paper discusses two of the major challenges: grain size in polycrystalline TMD monolayer films and chemical doping to improve TMD/metal contacts. The characterization techniques and the correlation with device electrical characteristics are investigated.

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T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016

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EP - 504

BT - 16th International Conference on Nanotechnology - IEEE NANO 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016

Y2 - 22 August 2016 through 25 August 2016

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Lin CP, Lin CT, Liu PS, Yu MJ, Hou TH. Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide. In 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 501-504. 7751338. (16th International Conference on Nanotechnology - IEEE NANO 2016). doi: 10.1109/NANO.2016.7751338

Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide

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