Gradient-based fast source mask optimization (SMO)

Jue Chin Yu*, Peichen Yu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

38 Scopus citations


As lithography still pushing toward to low-k1 region, resolution enhancement techniques (RETs) including source optimization (SO) and mask optimization (MO) are expected to overcome the fundamentally physics in optics. Recently inverse lithography (IL) is widely studied for source and mask optimization (SMO) to enhance the resolution for over diffraction limit integrate circuit (IC) patterns. In this paper, we propose a gradient based SMO algorithm where the SO and MO are two sequential steps due to their different image formation mechanism. Moreover, we employ three cost functions including aerial and resist image and the image contrast which is proposed in our previous work. We show that IL patterns produced by SMO have better pattern fidelity and image contrast than MO only patterns.

Original languageEnglish
Title of host publicationOptical Microlithography XXIV
StatePublished - 22 Jun 2011
EventOptical Microlithography XXIV - San Jose, CA, United States
Duration: 1 Mar 20113 Mar 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceOptical Microlithography XXIV
Country/TerritoryUnited States
CitySan Jose, CA


  • Abbe
  • Hopkins
  • Inverse lithography
  • Microlithography
  • SMO


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