GMR effect of Cu/Co multilayer on Si(1 0 0)

S. C. Ma*, C. K. Lo, Y. D. Yao, D. Y. Chiang, T. F. Ying, Der-Ray Huang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations

Abstract

(Cu/Co)10 was deposited on SiO2/Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1% at 10 K and it reduced to 4% at room temperature, while for the sample on SiO2/Si(1 0 0), the MR at 10 and 300 K were 19%, and 7.2%, respectively. The MR extracted from minor R-H loop was higher than that in major R-H loop. This could be due to the increment of domain wall which enhances the electrons scattering.

Original languageEnglish
Pages (from-to)131-134
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Volume209
Issue number1-3
DOIs
StatePublished - 1 Jan 2000
EventProceedings of the 1999 International Symposium on Advanced Magnetic Technologies (ISAMT'99) - Taipei, Taiwan
Duration: 24 May 199925 May 1999

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