Gettering of Ni from Ni-metal induced lateral crystallization polycrystalline silicon films using a gettering substrate

Chih Yuan Hou; Chi Ching Lin; Yew-Chuhg Wu

doi:10.1143/JJAP.45.6803

Gettering of Ni from Ni-metal induced lateral crystallization polycrystalline silicon films using a gettering substrate

Chih Yuan Hou, Chi Ching Lin, Yew-Chuhg Wu^*

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi ₂ precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as Ni-gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced.

Original language	English
Pages (from-to)	6803-6805
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	9 A
DOIs	https://doi.org/10.1143/JJAP.45.6803
State	Published - 7 Sep 2006

Keywords

Gettering
NILC
Thin-film transistors

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10.1143/JJAP.45.6803

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@article{4617d5eb07b941f69315e1774abe2641,

title = "Gettering of Ni from Ni-metal induced lateral crystallization polycrystalline silicon films using a gettering substrate",

abstract = "Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi 2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as Ni-gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced.",

keywords = "Gettering, NILC, Thin-film transistors",

author = "Hou, {Chih Yuan} and Lin, {Chi Ching} and Yew-Chuhg Wu",

year = "2006",

month = sep,

day = "7",

doi = "10.1143/JJAP.45.6803",

language = "English",

volume = "45",

pages = "6803--6805",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "9 A",

}

Gettering of Ni from Ni-metal induced lateral crystallization polycrystalline silicon films using a gettering substrate. / Hou, Chih Yuan; Lin, Chi Ching; Wu, Yew-Chuhg.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 9 A, 07.09.2006, p. 6803-6805.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Gettering of Ni from Ni-metal induced lateral crystallization polycrystalline silicon films using a gettering substrate

AU - Hou, Chih Yuan

AU - Lin, Chi Ching

AU - Wu, Yew-Chuhg

PY - 2006/9/7

Y1 - 2006/9/7

N2 - Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi 2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as Ni-gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced.

AB - Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi 2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as Ni-gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced.

KW - Gettering

KW - NILC

KW - Thin-film transistors

UR - http://www.scopus.com/inward/record.url?scp=33749005919&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.6803

DO - 10.1143/JJAP.45.6803

M3 - Article

AN - SCOPUS:33749005919

SN - 0021-4922

VL - 45

SP - 6803

EP - 6805

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 9 A

ER -

Gettering of Ni from Ni-metal induced lateral crystallization polycrystalline silicon films using a gettering substrate

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