Gettering Effect Induced by Oxygen-Deficient Titanium Oxide in InZnO and InGaZnO Channel Systems for Low-Power Display Applications

Shiang Shiou Yen; Yu Chien Chiu; Chun-Hu Cheng; Po-Chun Chen; Yu Chen Yeh; Chien-Hung Tung; Hsiao-Hsuan Hsu; Chun-Yen Chang

doi:10.1109/JDT.2015.2457425

Gettering Effect Induced by Oxygen-Deficient Titanium Oxide in InZnO and InGaZnO Channel Systems for Low-Power Display Applications

Shiang Shiou Yen, Yu Chien Chiu, Chun-Hu Cheng, Po-Chun Chen, Yu Chen Yeh, Chien-Hung Tung, Hsiao-Hsuan Hsu, Chun-Yen Chang

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

This paper reported the IGZO and IZO thin-film transistor (TFT) with titanium-oxide semiconductor as channel capping layer. After the TiOx Gettering process, the oxygen vacancies in IGZO channel were successfully modified to maximize the carrier concentration and device mobility. The superior transfer characteristics included a low sub-threshold swing of 79 mV/decade, a very high mobility of 68 cm(2)/V.s, and good on/off-current ratio of 5.61 x 10(6). However, the IZO channel with nano-crystallized grains and without Ga atom doping showed unfavorable transistor characteristics. In addition to apparently degraded transfer properties, the spontaneously oxidized TiOx capping layer also lead to an increase of channel parasitic resistance that limits the output driving current. Therefore, we believe that the existence of Ga-O bonds among IGZO channel would be helpful to stabilize oxygen diffusion behavior and electric structure during Gettering process.

Original language	English
Journal	IEEE/OSA Journal of Display Technology
Volume	12
Issue number	3
DOIs	https://doi.org/10.1109/JDT.2015.2457425
State	Published - Mar 2016

Keywords

Amorphous oxide semiconductor (AOS); Gettering effect; indium-gallium-zinc oxide (IGZO); indium-zinc oxide (IZO); thin-film transistor (TFT); titanium oxide
THIN-FILM TRANSISTORS; GATE DIELECTRICS; MOBILITY; TEMPERATURE

Access to Document

10.1109/JDT.2015.2457425

Cite this

@article{cb1a458a9bc34356a0b9423793d9c06f,

title = "Gettering Effect Induced by Oxygen-Deficient Titanium Oxide in InZnO and InGaZnO Channel Systems for Low-Power Display Applications",

abstract = "This paper reported the IGZO and IZO thin-film transistor (TFT) with titanium-oxide semiconductor as channel capping layer. After the TiOx Gettering process, the oxygen vacancies in IGZO channel were successfully modified to maximize the carrier concentration and device mobility. The superior transfer characteristics included a low sub-threshold swing of 79 mV/decade, a very high mobility of 68 cm(2)/V.s, and good on/off-current ratio of 5.61 x 10(6). However, the IZO channel with nano-crystallized grains and without Ga atom doping showed unfavorable transistor characteristics. In addition to apparently degraded transfer properties, the spontaneously oxidized TiOx capping layer also lead to an increase of channel parasitic resistance that limits the output driving current. Therefore, we believe that the existence of Ga-O bonds among IGZO channel would be helpful to stabilize oxygen diffusion behavior and electric structure during Gettering process.",

keywords = "Amorphous oxide semiconductor (AOS); Gettering effect; indium-gallium-zinc oxide (IGZO); indium-zinc oxide (IZO); thin-film transistor (TFT); titanium oxide, THIN-FILM TRANSISTORS; GATE DIELECTRICS; MOBILITY; TEMPERATURE",

author = "Yen, {Shiang Shiou} and Chiu, {Yu Chien} and Chun-Hu Cheng and Po-Chun Chen and Yeh, {Yu Chen} and Chien-Hung Tung and Hsiao-Hsuan Hsu and Chun-Yen Chang",

year = "2016",

month = mar,

doi = "10.1109/JDT.2015.2457425",

language = "English",

volume = "12",

journal = "IEEE/OSA Journal of Display Technology",

issn = "1551-319X",

publisher = "IEEE Computer Society",

number = "3",

}

TY - JOUR

T1 - Gettering Effect Induced by Oxygen-Deficient Titanium Oxide in InZnO and InGaZnO Channel Systems for Low-Power Display Applications

AU - Yen, Shiang Shiou

AU - Chiu, Yu Chien

AU - Cheng, Chun-Hu

AU - Chen, Po-Chun

AU - Yeh, Yu Chen

AU - Tung, Chien-Hung

AU - Hsu, Hsiao-Hsuan

AU - Chang, Chun-Yen

PY - 2016/3

Y1 - 2016/3

N2 - This paper reported the IGZO and IZO thin-film transistor (TFT) with titanium-oxide semiconductor as channel capping layer. After the TiOx Gettering process, the oxygen vacancies in IGZO channel were successfully modified to maximize the carrier concentration and device mobility. The superior transfer characteristics included a low sub-threshold swing of 79 mV/decade, a very high mobility of 68 cm(2)/V.s, and good on/off-current ratio of 5.61 x 10(6). However, the IZO channel with nano-crystallized grains and without Ga atom doping showed unfavorable transistor characteristics. In addition to apparently degraded transfer properties, the spontaneously oxidized TiOx capping layer also lead to an increase of channel parasitic resistance that limits the output driving current. Therefore, we believe that the existence of Ga-O bonds among IGZO channel would be helpful to stabilize oxygen diffusion behavior and electric structure during Gettering process.

AB - This paper reported the IGZO and IZO thin-film transistor (TFT) with titanium-oxide semiconductor as channel capping layer. After the TiOx Gettering process, the oxygen vacancies in IGZO channel were successfully modified to maximize the carrier concentration and device mobility. The superior transfer characteristics included a low sub-threshold swing of 79 mV/decade, a very high mobility of 68 cm(2)/V.s, and good on/off-current ratio of 5.61 x 10(6). However, the IZO channel with nano-crystallized grains and without Ga atom doping showed unfavorable transistor characteristics. In addition to apparently degraded transfer properties, the spontaneously oxidized TiOx capping layer also lead to an increase of channel parasitic resistance that limits the output driving current. Therefore, we believe that the existence of Ga-O bonds among IGZO channel would be helpful to stabilize oxygen diffusion behavior and electric structure during Gettering process.

KW - Amorphous oxide semiconductor (AOS); Gettering effect; indium-gallium-zinc oxide (IGZO); indium-zinc oxide (IZO); thin-film transistor (TFT); titanium oxide

KW - THIN-FILM TRANSISTORS; GATE DIELECTRICS; MOBILITY; TEMPERATURE

U2 - 10.1109/JDT.2015.2457425

DO - 10.1109/JDT.2015.2457425

M3 - Article

SN - 1551-319X

VL - 12

JO - IEEE/OSA Journal of Display Technology

JF - IEEE/OSA Journal of Display Technology

IS - 3

ER -

Gettering Effect Induced by Oxygen-Deficient Titanium Oxide in InZnO and InGaZnO Channel Systems for Low-Power Display Applications

Abstract

Keywords

Access to Document

Fingerprint

Cite this