Ge0.9Sn0.1 multiple-quantum-well p-i-n photodiodes for optical communications at 2 urn

Yuan Dong*, Wei Wang, Shengqiang Xu, Dian Lei, Xiao Gong, Shun Ying Lee, Wan Khai Loke, Soon Fatt Yoon, Gengchiau Liang, Yee Chia Yeo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrate a Ge0.9Sn0.1 multiple-quantum-well p-i-n photodiode on Si substrate with a cutoff wavelength beyond 2 μm. A record-low dark current density of 31 mA/cm2 at Vbias = -1 V is achieved.

Original languageEnglish
Title of host publication2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580231
StatePublished - 31 May 2017
Event2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Los Angeles, United States
Duration: 19 Mar 201723 Mar 2017

Publication series

Name2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings

Conference

Conference2017 Optical Fiber Communications Conference and Exhibition, OFC 2017
Country/TerritoryUnited States
CityLos Angeles
Period19/03/1723/03/17

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