Ge0.9Sn0.1 multiple-quantum-well p-i-n photodiodes for optical communications at 2 μm

Yuan Dong, Wei Wang, Shengqiang Xu, Dian Lei, Xiao Gong, Shuh Ying Lee, Wan Khai Loke, Soon Fatt Yoon, Gengchiau Liang, Yee Chia Yeo*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrate a Ge0.9Sn0.1 multiple-quantum-well p-i-n photodiode on Si substrate with a cutoff wavelength beyond 2 μm. A record-low dark current density of 31 mA/cm2 at Vbias = -1 V is achieved.

Original languageEnglish
Title of host publicationOptical Fiber Communication Conference, OFC 2017
PublisherOptica Publishing Group (formerly OSA)
ISBN (Print)9781943580231
DOIs
StatePublished - 2017
EventOptical Fiber Communication Conference, OFC 2017 - Los Angeles, United States
Duration: 19 Mar 201723 Mar 2017

Publication series

NameOptics InfoBase Conference Papers
VolumePart F40-OFC 2017
ISSN (Electronic)2162-2701

Conference

ConferenceOptical Fiber Communication Conference, OFC 2017
Country/TerritoryUnited States
CityLos Angeles
Period19/03/1723/03/17

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