Keyphrases
Device Technology
100%
Device Design
100%
Germanium-tin
100%
Silicon Avalanche Photodiode
100%
Technology Demonstration
100%
Si Avalanche Photodiodes
100%
III-V
50%
X Ray Diffraction
50%
Atomic Force Microscopy
50%
Transmission Electron Microscopy
50%
Wavelength Range
50%
Temperature Effect
50%
Responsivity
50%
Si Layer
50%
Bias Voltage
50%
Absorption Layer
50%
Material Characterization
50%
K(I)
50%
Breakdown Voltage
50%
Dark Current
50%
X-ray Transmission
50%
Thermal Coefficient
50%
Thermal Sensitivity
50%
Avalanche Photodiode
50%
Avalanche Gain
50%
Surface Leakage Current
50%
Separate Absorption
50%
Charge multiplication
50%
Material Science
Silicon
100%
Germanium
100%
Tin
100%
X-Ray Diffraction
50%
Transmission Electron Microscopy
50%
Surface (Surface Science)
50%
Atomic Force Microscopy
50%
Engineering
Avalanche Photodiode
100%
Ray Diffraction
25%
Atomic Force Microscopy
25%
Breakdown Voltage
25%
Responsivity
25%
Bias Voltage
25%
Temperature Dependence
25%
Absorption Layer
25%
Physics
Photodiode
100%
X Ray Diffraction
25%
Temperature Dependence
25%
Dark Current
25%
Transmission Electron Microscopy
25%
Atomic Force Microscopy
25%