Germanium-Tin on Si avalanche photodiode: Device design and technology demonstration

Yuan Dong; Wei Wang; Xin Xu; Xiao Gong; Dian Lei; Qian Zhou; Zhe Xu; Wan Khai Loke; Soon Fatt Yoon; Gengchiau Liang; Yee Chia Yeo

doi:10.1109/TED.2014.2366205

Germanium-Tin on Si avalanche photodiode: Device design and technology demonstration

Yuan Dong
, Wei Wang
, Xin Xu
, Xiao Gong
, Dian Lei
, Qian Zhou
, Zhe Xu
, Wan Khai Loke
, Soon Fatt Yoon
, Gengchiau Liang
, Yee Chia Yeo

Institute of Pioneer Semiconductor Innovation

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

We report the demonstration of a Ge_0.95Sn_0.05 on silicon (Ge_0.95Sn_0.05/Si) avalanche photodiode (APD) having a separate-absorption-charge-multiplication structure, wherein a Ge_0.95Sn_0.05 layer and a Si layer function as an absorption layer and a multiplication layer, respectively. Material characterization was performed by atomic force microscopy, X-ray diffraction, and transmission electron microscopy. The dark current I_dark of the APD is dominated by the area-dependent bulk leakage rather than the surface leakage. The temperature dependence of breakdown voltage of the Ge_0.95Sn_0.05/Si APD was characterized and a thermal coefficient of 0.05% K^-1 was obtained, achieving a lower thermal sensitivity than the conventional III-V-based APDs. In the wavelength range of 1600-1630 nm, a responsivity of ∼ 1 A/W (bias voltage V_bias=-9.8 V was achieved due to the internal avalanche gain.

Original language	English
Article number	6971107
Pages (from-to)	128-135
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	1
DOIs	https://doi.org/10.1109/TED.2014.2366205
State	Published - 1 Jan 2015

Keywords

Avalanche photodiode (APD)
germanium-tin
near-infrared (NIR) photodetection.

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10.1109/TED.2014.2366205

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@article{be597881ca4849bd87c70f380cf777f9,

title = "Germanium-Tin on Si avalanche photodiode: Device design and technology demonstration",

abstract = "We report the demonstration of a Ge0.95Sn0.05 on silicon (Ge0.95Sn0.05/Si) avalanche photodiode (APD) having a separate-absorption-charge-multiplication structure, wherein a Ge0.95Sn0.05 layer and a Si layer function as an absorption layer and a multiplication layer, respectively. Material characterization was performed by atomic force microscopy, X-ray diffraction, and transmission electron microscopy. The dark current Idark of the APD is dominated by the area-dependent bulk leakage rather than the surface leakage. The temperature dependence of breakdown voltage of the Ge0.95Sn0.05/Si APD was characterized and a thermal coefficient of 0.05\% K-1 was obtained, achieving a lower thermal sensitivity than the conventional III-V-based APDs. In the wavelength range of 1600-1630 nm, a responsivity of ∼ 1 A/W (bias voltage Vbias=-9.8 V was achieved due to the internal avalanche gain.",

keywords = "Avalanche photodiode (APD), germanium-tin, near-infrared (NIR) photodetection.",

author = "Yuan Dong and Wei Wang and Xin Xu and Xiao Gong and Dian Lei and Qian Zhou and Zhe Xu and Loke, \{Wan Khai\} and Yoon, \{Soon Fatt\} and Gengchiau Liang and Yeo, \{Yee Chia\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2015",

month = jan,

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doi = "10.1109/TED.2014.2366205",

language = "English",

volume = "62",

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journal = "IEEE Transactions on Electron Devices",

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T1 - Germanium-Tin on Si avalanche photodiode

T2 - Device design and technology demonstration

AU - Dong, Yuan

AU - Wang, Wei

AU - Xu, Xin

AU - Gong, Xiao

AU - Lei, Dian

AU - Zhou, Qian

AU - Xu, Zhe

AU - Loke, Wan Khai

AU - Yoon, Soon Fatt

AU - Liang, Gengchiau

AU - Yeo, Yee Chia

PY - 2015/1/1

Y1 - 2015/1/1

N2 - We report the demonstration of a Ge0.95Sn0.05 on silicon (Ge0.95Sn0.05/Si) avalanche photodiode (APD) having a separate-absorption-charge-multiplication structure, wherein a Ge0.95Sn0.05 layer and a Si layer function as an absorption layer and a multiplication layer, respectively. Material characterization was performed by atomic force microscopy, X-ray diffraction, and transmission electron microscopy. The dark current Idark of the APD is dominated by the area-dependent bulk leakage rather than the surface leakage. The temperature dependence of breakdown voltage of the Ge0.95Sn0.05/Si APD was characterized and a thermal coefficient of 0.05% K-1 was obtained, achieving a lower thermal sensitivity than the conventional III-V-based APDs. In the wavelength range of 1600-1630 nm, a responsivity of ∼ 1 A/W (bias voltage Vbias=-9.8 V was achieved due to the internal avalanche gain.

AB - We report the demonstration of a Ge0.95Sn0.05 on silicon (Ge0.95Sn0.05/Si) avalanche photodiode (APD) having a separate-absorption-charge-multiplication structure, wherein a Ge0.95Sn0.05 layer and a Si layer function as an absorption layer and a multiplication layer, respectively. Material characterization was performed by atomic force microscopy, X-ray diffraction, and transmission electron microscopy. The dark current Idark of the APD is dominated by the area-dependent bulk leakage rather than the surface leakage. The temperature dependence of breakdown voltage of the Ge0.95Sn0.05/Si APD was characterized and a thermal coefficient of 0.05% K-1 was obtained, achieving a lower thermal sensitivity than the conventional III-V-based APDs. In the wavelength range of 1600-1630 nm, a responsivity of ∼ 1 A/W (bias voltage Vbias=-9.8 V was achieved due to the internal avalanche gain.

KW - Avalanche photodiode (APD)

KW - germanium-tin

KW - near-infrared (NIR) photodetection.

UR - https://www.scopus.com/pages/publications/84920172355

U2 - 10.1109/TED.2014.2366205

DO - 10.1109/TED.2014.2366205

M3 - Article

AN - SCOPUS:84920172355

SN - 0018-9383

VL - 62

SP - 128

EP - 135

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

M1 - 6971107

ER -

Germanium-Tin on Si avalanche photodiode: Device design and technology demonstration

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