Germanium-Tin on Si avalanche photodiode: Device design and technology demonstration

Yuan Dong; Wei Wang; Xin Xu; Xiao Gong; Dian Lei; Qian Zhou; Zhe Xu; Wan Khai Loke; Soon Fatt Yoon; Gengchiau Liang; Yee Chia Yeo

doi:10.1109/TED.2014.2366205

Germanium-Tin on Si avalanche photodiode: Device design and technology demonstration

Yuan Dong, Wei Wang, Xin Xu, Xiao Gong, Dian Lei, Qian Zhou, Zhe Xu, Wan Khai Loke, Soon Fatt Yoon, Gengchiau Liang, Yee Chia Yeo

Institute of Pioneer Semiconductor Innovation

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

We report the demonstration of a Ge_0.95Sn_0.05 on silicon (Ge_0.95Sn_0.05/Si) avalanche photodiode (APD) having a separate-absorption-charge-multiplication structure, wherein a Ge_0.95Sn_0.05 layer and a Si layer function as an absorption layer and a multiplication layer, respectively. Material characterization was performed by atomic force microscopy, X-ray diffraction, and transmission electron microscopy. The dark current I_dark of the APD is dominated by the area-dependent bulk leakage rather than the surface leakage. The temperature dependence of breakdown voltage of the Ge_0.95Sn_0.05/Si APD was characterized and a thermal coefficient of 0.05% K^-1 was obtained, achieving a lower thermal sensitivity than the conventional III-V-based APDs. In the wavelength range of 1600-1630 nm, a responsivity of ∼ 1 A/W (bias voltage V_bias=-9.8 V was achieved due to the internal avalanche gain.

Original language	English
Article number	6971107
Pages (from-to)	128-135
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	1
DOIs	https://doi.org/10.1109/TED.2014.2366205
State	Published - 1 Jan 2015

Keywords

Avalanche photodiode (APD)
germanium-tin
near-infrared (NIR) photodetection.

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10.1109/TED.2014.2366205

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@article{be597881ca4849bd87c70f380cf777f9,

title = "Germanium-Tin on Si avalanche photodiode: Device design and technology demonstration",

abstract = "We report the demonstration of a Ge0.95Sn0.05 on silicon (Ge0.95Sn0.05/Si) avalanche photodiode (APD) having a separate-absorption-charge-multiplication structure, wherein a Ge0.95Sn0.05 layer and a Si layer function as an absorption layer and a multiplication layer, respectively. Material characterization was performed by atomic force microscopy, X-ray diffraction, and transmission electron microscopy. The dark current Idark of the APD is dominated by the area-dependent bulk leakage rather than the surface leakage. The temperature dependence of breakdown voltage of the Ge0.95Sn0.05/Si APD was characterized and a thermal coefficient of 0.05% K-1 was obtained, achieving a lower thermal sensitivity than the conventional III-V-based APDs. In the wavelength range of 1600-1630 nm, a responsivity of ∼ 1 A/W (bias voltage Vbias=-9.8 V was achieved due to the internal avalanche gain.",

keywords = "Avalanche photodiode (APD), germanium-tin, near-infrared (NIR) photodetection.",

author = "Yuan Dong and Wei Wang and Xin Xu and Xiao Gong and Dian Lei and Qian Zhou and Zhe Xu and Loke, {Wan Khai} and Yoon, {Soon Fatt} and Gengchiau Liang and Yeo, {Yee Chia}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2015",

month = jan,

day = "1",

doi = "10.1109/TED.2014.2366205",

language = "English",

volume = "62",

pages = "128--135",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Germanium-Tin on Si avalanche photodiode

T2 - Device design and technology demonstration

AU - Dong, Yuan

AU - Wang, Wei

AU - Xu, Xin

AU - Gong, Xiao

AU - Lei, Dian

AU - Zhou, Qian

AU - Xu, Zhe

AU - Loke, Wan Khai

AU - Yoon, Soon Fatt

AU - Liang, Gengchiau

AU - Yeo, Yee Chia

PY - 2015/1/1

Y1 - 2015/1/1

N2 - We report the demonstration of a Ge0.95Sn0.05 on silicon (Ge0.95Sn0.05/Si) avalanche photodiode (APD) having a separate-absorption-charge-multiplication structure, wherein a Ge0.95Sn0.05 layer and a Si layer function as an absorption layer and a multiplication layer, respectively. Material characterization was performed by atomic force microscopy, X-ray diffraction, and transmission electron microscopy. The dark current Idark of the APD is dominated by the area-dependent bulk leakage rather than the surface leakage. The temperature dependence of breakdown voltage of the Ge0.95Sn0.05/Si APD was characterized and a thermal coefficient of 0.05% K-1 was obtained, achieving a lower thermal sensitivity than the conventional III-V-based APDs. In the wavelength range of 1600-1630 nm, a responsivity of ∼ 1 A/W (bias voltage Vbias=-9.8 V was achieved due to the internal avalanche gain.

AB - We report the demonstration of a Ge0.95Sn0.05 on silicon (Ge0.95Sn0.05/Si) avalanche photodiode (APD) having a separate-absorption-charge-multiplication structure, wherein a Ge0.95Sn0.05 layer and a Si layer function as an absorption layer and a multiplication layer, respectively. Material characterization was performed by atomic force microscopy, X-ray diffraction, and transmission electron microscopy. The dark current Idark of the APD is dominated by the area-dependent bulk leakage rather than the surface leakage. The temperature dependence of breakdown voltage of the Ge0.95Sn0.05/Si APD was characterized and a thermal coefficient of 0.05% K-1 was obtained, achieving a lower thermal sensitivity than the conventional III-V-based APDs. In the wavelength range of 1600-1630 nm, a responsivity of ∼ 1 A/W (bias voltage Vbias=-9.8 V was achieved due to the internal avalanche gain.

KW - Avalanche photodiode (APD)

KW - germanium-tin

KW - near-infrared (NIR) photodetection.

UR - http://www.scopus.com/inward/record.url?scp=84920172355&partnerID=8YFLogxK

U2 - 10.1109/TED.2014.2366205

DO - 10.1109/TED.2014.2366205

M3 - Article

AN - SCOPUS:84920172355

SN - 0018-9383

VL - 62

SP - 128

EP - 135

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

M1 - 6971107

ER -

Germanium-Tin on Si avalanche photodiode: Device design and technology demonstration

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