Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

Yuan Dong; Wei Wang; Shuh Ying Lee; Dian Lei; Xiao Gong; Wan Khai Loke; Soon Fatt Yoon; Gengchiau Liang; Yee Chia Yeo

doi:10.1088/0268-1242/31/9/095001

Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

Yuan Dong, Wei Wang, Shuh Ying Lee, Dian Lei, Xiao Gong, Wan Khai Loke, Soon Fatt Yoon, Gengchiau Liang, Yee Chia Yeo

Institute of Pioneer Semiconductor Innovation

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We report the demonstration of a germanium-tin multiple quantum well (Ge_0.9Sn_0.1 MQW)-on-Si avalanche photodiode (APD) for light detection near the 2 μm wavelength range. The measured spectral response covers wavelengths from 1510 to 2003 nm. An optical responsivity of 0.33 A W^-1 is achieved at 2003 nm due to the internal avalanche gain. In addition, a thermal coefficient of breakdown voltage is extracted to be 0.053% K^-1 based on the temperature-dependent dark current measurement. As compared to the traditional 2 μm wavelength APDs, the Si-based APD is promising for its small excess noise factor, less stringent demand on temperature stability, and its compatibility with silicon technology.

Original language	English
Article number	095001
Journal	Semiconductor Science and Technology
Volume	31
Issue number	9
DOIs	https://doi.org/10.1088/0268-1242/31/9/095001
State	Published - 25 Jul 2016

Keywords

avalanche photodiode
germanium-tin
multiple quantum well

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10.1088/0268-1242/31/9/095001

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title = "Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength",

abstract = "We report the demonstration of a germanium-tin multiple quantum well (Ge0.9Sn0.1 MQW)-on-Si avalanche photodiode (APD) for light detection near the 2 μm wavelength range. The measured spectral response covers wavelengths from 1510 to 2003 nm. An optical responsivity of 0.33 A W-1 is achieved at 2003 nm due to the internal avalanche gain. In addition, a thermal coefficient of breakdown voltage is extracted to be 0.053% K-1 based on the temperature-dependent dark current measurement. As compared to the traditional 2 μm wavelength APDs, the Si-based APD is promising for its small excess noise factor, less stringent demand on temperature stability, and its compatibility with silicon technology.",

keywords = "avalanche photodiode, germanium-tin, multiple quantum well",

author = "Yuan Dong and Wei Wang and Lee, {Shuh Ying} and Dian Lei and Xiao Gong and Loke, {Wan Khai} and Yoon, {Soon Fatt} and Gengchiau Liang and Yeo, {Yee Chia}",

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T1 - Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

AU - Dong, Yuan

AU - Wang, Wei

AU - Lee, Shuh Ying

AU - Lei, Dian

AU - Gong, Xiao

AU - Loke, Wan Khai

AU - Yoon, Soon Fatt

AU - Liang, Gengchiau

AU - Yeo, Yee Chia

PY - 2016/7/25

Y1 - 2016/7/25

N2 - We report the demonstration of a germanium-tin multiple quantum well (Ge0.9Sn0.1 MQW)-on-Si avalanche photodiode (APD) for light detection near the 2 μm wavelength range. The measured spectral response covers wavelengths from 1510 to 2003 nm. An optical responsivity of 0.33 A W-1 is achieved at 2003 nm due to the internal avalanche gain. In addition, a thermal coefficient of breakdown voltage is extracted to be 0.053% K-1 based on the temperature-dependent dark current measurement. As compared to the traditional 2 μm wavelength APDs, the Si-based APD is promising for its small excess noise factor, less stringent demand on temperature stability, and its compatibility with silicon technology.

AB - We report the demonstration of a germanium-tin multiple quantum well (Ge0.9Sn0.1 MQW)-on-Si avalanche photodiode (APD) for light detection near the 2 μm wavelength range. The measured spectral response covers wavelengths from 1510 to 2003 nm. An optical responsivity of 0.33 A W-1 is achieved at 2003 nm due to the internal avalanche gain. In addition, a thermal coefficient of breakdown voltage is extracted to be 0.053% K-1 based on the temperature-dependent dark current measurement. As compared to the traditional 2 μm wavelength APDs, the Si-based APD is promising for its small excess noise factor, less stringent demand on temperature stability, and its compatibility with silicon technology.

KW - avalanche photodiode

KW - germanium-tin

KW - multiple quantum well

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U2 - 10.1088/0268-1242/31/9/095001

DO - 10.1088/0268-1242/31/9/095001

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SN - 0268-1242

VL - 31

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 9

M1 - 095001

ER -

Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

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Keywords

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