Germanium Quantum-Dot Single-Hole Transistors with Self-organized Tunnel Barriers and Self-aligned Electrodes Using Ingenious Sidewall Spacer and Oxidation Techniques

Rong Cun Pan; I. Hsiang Wang; Chi Cheng Lai; Thomas George; Horng Chih Lin; Pei Wen Li

doi:10.1109/EDTM53872.2022.9798091

Germanium Quantum-Dot Single-Hole Transistors with Self-organized Tunnel Barriers and Self-aligned Electrodes Using Ingenious Sidewall Spacer and Oxidation Techniques

Rong Cun Pan, I. Hsiang Wang, Chi Cheng Lai, Thomas George, Horng Chih Lin, Pei Wen Li^*

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We report the formation of Ge quantum dots (QDs) with self-organized tunnel barriers and self-aligned electrodes, using a coordinated combination of lithographic patterning and self-assembled growth. The core experimental design is based on the thermal oxidation of poly-SiGe spacer islands located at the included-angle location of Si3N4/Si-trenches with specially designed fanout structures. By suitably adjusting the process times for conformal deposition, direct etch back and thermal oxidation of poly-SiGe, Ge QDs and their tunnel barriers with good tunability in sizes and widths were controllably achieved. Ge QDs are electrically addressable via self-aligned Si electrodes, offering an effective building block for the implementation of single-electron devices.

Original language	English
Title of host publication	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	321-323
Number of pages	3
ISBN (Electronic)	9781665421775
DOIs	https://doi.org/10.1109/EDTM53872.2022.9798091
State	Published - 2022
Event	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan Duration: 6 Mar 2022 → 9 Mar 2022

Publication series

Name	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Country/Territory	Japan
City	Virtual, Online
Period	6/03/22 → 9/03/22

Keywords

Ge
quantum dot
single-hole transistors

Access to Document

10.1109/EDTM53872.2022.9798091

Cite this

Pan, R. C., Wang, I. H., Lai, C. C., George, T., Lin, H. C., & Li, P. W. (2022). Germanium Quantum-Dot Single-Hole Transistors with Self-organized Tunnel Barriers and Self-aligned Electrodes Using Ingenious Sidewall Spacer and Oxidation Techniques. In 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 (pp. 321-323). (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM53872.2022.9798091

Pan, Rong Cun ; Wang, I. Hsiang ; Lai, Chi Cheng et al. / Germanium Quantum-Dot Single-Hole Transistors with Self-organized Tunnel Barriers and Self-aligned Electrodes Using Ingenious Sidewall Spacer and Oxidation Techniques. 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 321-323 (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).

@inproceedings{37a7d05f02fa4bb8a096e9dbccc5340d,

title = "Germanium Quantum-Dot Single-Hole Transistors with Self-organized Tunnel Barriers and Self-aligned Electrodes Using Ingenious Sidewall Spacer and Oxidation Techniques",

abstract = "We report the formation of Ge quantum dots (QDs) with self-organized tunnel barriers and self-aligned electrodes, using a coordinated combination of lithographic patterning and self-assembled growth. The core experimental design is based on the thermal oxidation of poly-SiGe spacer islands located at the included-angle location of Si3N4/Si-trenches with specially designed fanout structures. By suitably adjusting the process times for conformal deposition, direct etch back and thermal oxidation of poly-SiGe, Ge QDs and their tunnel barriers with good tunability in sizes and widths were controllably achieved. Ge QDs are electrically addressable via self-aligned Si electrodes, offering an effective building block for the implementation of single-electron devices.",

keywords = "Ge, quantum dot, single-hole transistors",

author = "Pan, {Rong Cun} and Wang, {I. Hsiang} and Lai, {Chi Cheng} and Thomas George and Lin, {Horng Chih} and Li, {Pei Wen}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 ; Conference date: 06-03-2022 Through 09-03-2022",

year = "2022",

doi = "10.1109/EDTM53872.2022.9798091",

language = "English",

series = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "321--323",

booktitle = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",

address = "美國",

}

Pan, RC, Wang, IH, Lai, CC, George, T, Lin, HC & Li, PW 2022, Germanium Quantum-Dot Single-Hole Transistors with Self-organized Tunnel Barriers and Self-aligned Electrodes Using Ingenious Sidewall Spacer and Oxidation Techniques. in 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, Institute of Electrical and Electronics Engineers Inc., pp. 321-323, 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, Virtual, Online, Japan, 6/03/22. https://doi.org/10.1109/EDTM53872.2022.9798091

Germanium Quantum-Dot Single-Hole Transistors with Self-organized Tunnel Barriers and Self-aligned Electrodes Using Ingenious Sidewall Spacer and Oxidation Techniques. / Pan, Rong Cun; Wang, I. Hsiang; Lai, Chi Cheng et al.
6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 321-323 (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Germanium Quantum-Dot Single-Hole Transistors with Self-organized Tunnel Barriers and Self-aligned Electrodes Using Ingenious Sidewall Spacer and Oxidation Techniques

AU - Pan, Rong Cun

AU - Wang, I. Hsiang

AU - Lai, Chi Cheng

AU - George, Thomas

AU - Lin, Horng Chih

AU - Li, Pei Wen

PY - 2022

Y1 - 2022

N2 - We report the formation of Ge quantum dots (QDs) with self-organized tunnel barriers and self-aligned electrodes, using a coordinated combination of lithographic patterning and self-assembled growth. The core experimental design is based on the thermal oxidation of poly-SiGe spacer islands located at the included-angle location of Si3N4/Si-trenches with specially designed fanout structures. By suitably adjusting the process times for conformal deposition, direct etch back and thermal oxidation of poly-SiGe, Ge QDs and their tunnel barriers with good tunability in sizes and widths were controllably achieved. Ge QDs are electrically addressable via self-aligned Si electrodes, offering an effective building block for the implementation of single-electron devices.

AB - We report the formation of Ge quantum dots (QDs) with self-organized tunnel barriers and self-aligned electrodes, using a coordinated combination of lithographic patterning and self-assembled growth. The core experimental design is based on the thermal oxidation of poly-SiGe spacer islands located at the included-angle location of Si3N4/Si-trenches with specially designed fanout structures. By suitably adjusting the process times for conformal deposition, direct etch back and thermal oxidation of poly-SiGe, Ge QDs and their tunnel barriers with good tunability in sizes and widths were controllably achieved. Ge QDs are electrically addressable via self-aligned Si electrodes, offering an effective building block for the implementation of single-electron devices.

KW - Ge

KW - quantum dot

KW - single-hole transistors

UR - http://www.scopus.com/inward/record.url?scp=85133969145&partnerID=8YFLogxK

U2 - 10.1109/EDTM53872.2022.9798091

DO - 10.1109/EDTM53872.2022.9798091

M3 - Conference contribution

AN - SCOPUS:85133969145

T3 - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

SP - 321

EP - 323

BT - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Y2 - 6 March 2022 through 9 March 2022

ER -

Pan RC, Wang IH, Lai CC, George T, Lin HC , Li PW. Germanium Quantum-Dot Single-Hole Transistors with Self-organized Tunnel Barriers and Self-aligned Electrodes Using Ingenious Sidewall Spacer and Oxidation Techniques. In 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 321-323. (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022). doi: 10.1109/EDTM53872.2022.9798091

Germanium Quantum-Dot Single-Hole Transistors with Self-organized Tunnel Barriers and Self-aligned Electrodes Using Ingenious Sidewall Spacer and Oxidation Techniques

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this