Germanium pMOSFETs with schottky-barrier germanide S/D, high-k gate dielectric and metal gate

Shiyang Zhu; Rui Li; S. J. Lee; M. F. Li; Anyan Du; Jagar Singh; Chunxiang Zhu; Albert Chin; D. L. Kwong

doi:10.1142/9781848164079_0006

Germanium pMOSFETs with schottky-barrier germanide S/D, high-k gate dielectric and metal gate

Shiyang Zhu
, Rui Li
, S. J. Lee
, M. F. Li
, Anyan Du
, Jagar Singh
, Chunxiang Zhu
, Albert Chin
, D. L. Kwong

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

Schottky-barrier source/drain (S/D) Germanium p-channel MOSFETs are demonstrated for the first time with HfAIO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as ~5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi—Si contact as well as the higher mobility of Ge channel than that of Si.

Original language	English
Title of host publication	Selected Semiconductor Research
Publisher	Imperial College Press
Pages	346-348
Number of pages	3
ISBN (Electronic)	9781848164079
ISBN (Print)	9781848164062
DOIs	https://doi.org/10.1142/9781848164079_0006
State	Published - 1 Jan 2011

Keywords

Germanium
High-k
MOSFET
Metal gate
Schottky

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10.1142/9781848164079_0006

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abstract = "Schottky-barrier source/drain (S/D) Germanium p-channel MOSFETs are demonstrated for the first time with HfAIO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as \textasciitilde{}5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi—Si contact as well as the higher mobility of Ge channel than that of Si.",

keywords = "Germanium, High-k, MOSFET, Metal gate, Schottky",

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T1 - Germanium pMOSFETs with schottky-barrier germanide S/D, high-k gate dielectric and metal gate

AU - Zhu, Shiyang

AU - Li, Rui

AU - Lee, S. J.

AU - Li, M. F.

AU - Du, Anyan

AU - Singh, Jagar

AU - Zhu, Chunxiang

AU - Chin, Albert

AU - Kwong, D. L.

PY - 2011/1/1

Y1 - 2011/1/1

N2 - Schottky-barrier source/drain (S/D) Germanium p-channel MOSFETs are demonstrated for the first time with HfAIO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as ~5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi—Si contact as well as the higher mobility of Ge channel than that of Si.

AB - Schottky-barrier source/drain (S/D) Germanium p-channel MOSFETs are demonstrated for the first time with HfAIO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as ~5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi—Si contact as well as the higher mobility of Ge channel than that of Si.

KW - Germanium

KW - High-k

KW - MOSFET

KW - Metal gate

KW - Schottky

UR - https://www.scopus.com/pages/publications/84967360305

U2 - 10.1142/9781848164079_0006

DO - 10.1142/9781848164079_0006

M3 - Chapter

AN - SCOPUS:84967360305

SN - 9781848164062

SP - 346

EP - 348

BT - Selected Semiconductor Research

PB - Imperial College Press

ER -

Germanium pMOSFETs with schottky-barrier germanide S/D, high-k gate dielectric and metal gate

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Keywords

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