Germanium nanowire-induced mobility enhancement in polythiophene field effect transistors

Chien-Wen Hsieh, Chih Yu Chan, Chih Wen Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

P-channel solution-processed organic thin film transistors based on a dual layer semiconducting network of polythiophene polymers and oriented germanium nanowires show a marked enhancement of up to five-fold in hole field effect mobility with respect to that of pristine polythiophene devices. The work presented here furthers our understanding of the interaction between polythiophene and oriented nanowires. The nanowire orientation relative to the soure and drain electrodes plays a crucial role in substantially influencing the polymer morphology and transistor performance.

Original languageEnglish
Title of host publicationAM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages199-200
Number of pages2
ISBN (Electronic)9784990875336
StatePublished - 8 Aug 2017
Event24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 - Kyoto, Japan
Duration: 4 Jul 20177 Jul 2017

Publication series

NameAM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Conference

Conference24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017
Country/TerritoryJapan
CityKyoto
Period4/07/177/07/17

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