Generally applicable self-masking technique for nanotips array fabrication

Kuei Hsien Chen; Chih Hsun Hsu; Hung Chun Lo; Surojit Chattopadhyay; Chien Ting Wu; Jih Shang Hwang; Ying Jay Yang; L. I.Chyong Chen

doi:10.1142/S0219581X05003838

Generally applicable self-masking technique for nanotips array fabrication

Kuei Hsien Chen^*, Chih Hsun Hsu, Hung Chun Lo, Surojit Chattopadhyay, Chien Ting Wu, Jih Shang Hwang, Ying Jay Yang, L. I.Chyong Chen

^*Corresponding author for this work

Institute of Biophotonics

Research output: Contribution to journal › Article › peer-review

Abstract

Well-aligned nanotip arrays were fabricated via a self-masking dry etching technique in an electron cyclotron resonance (ECR) plasma process. Nanotip arrays of Si, poly silicon, GaN, GaP, sapphire, and Al were fabricated. Simultaneous etching of the substrate and formation of silicon carbide (SiC) protecting caps are attributed to the nanotip formation. The ultra-low turn-on field for electron field emission as well as the surface enhanced Raman Spectroscopic study of Si nanotips is also demonstrated.

Original language	English
Pages (from-to)	879-886
Number of pages	8
Journal	International Journal of Nanoscience
Volume	4
Issue number	5-6
DOIs	https://doi.org/10.1142/S0219581X05003838
State	Published - Oct 2005

Keywords

Chemical vapor deposition
Electron cyclotron resonance
Field emission
Nanostructure
Surface-enhanced Raman spectroscopy

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10.1142/S0219581X05003838

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@article{12d17a98425a4cc7a5e9e373145cf66d,

title = "Generally applicable self-masking technique for nanotips array fabrication",

abstract = "Well-aligned nanotip arrays were fabricated via a self-masking dry etching technique in an electron cyclotron resonance (ECR) plasma process. Nanotip arrays of Si, poly silicon, GaN, GaP, sapphire, and Al were fabricated. Simultaneous etching of the substrate and formation of silicon carbide (SiC) protecting caps are attributed to the nanotip formation. The ultra-low turn-on field for electron field emission as well as the surface enhanced Raman Spectroscopic study of Si nanotips is also demonstrated.",

keywords = "Chemical vapor deposition, Electron cyclotron resonance, Field emission, Nanostructure, Surface-enhanced Raman spectroscopy",

author = "Chen, {Kuei Hsien} and Hsu, {Chih Hsun} and Lo, {Hung Chun} and Surojit Chattopadhyay and Wu, {Chien Ting} and Hwang, {Jih Shang} and Yang, {Ying Jay} and Chen, {L. I.Chyong}",

note = "Funding Information: The authors would like to thank National Science Council, the AFOSR, Asian Office of Aerospace Research and Development and Army Research Office in Far East for financial support.",

year = "2005",

month = oct,

doi = "10.1142/S0219581X05003838",

language = "English",

volume = "4",

pages = "879--886",

journal = "International Journal of Nanoscience",

issn = "0219-581X",

publisher = "World Scientific",

number = "5-6",

}

TY - JOUR

T1 - Generally applicable self-masking technique for nanotips array fabrication

AU - Chen, Kuei Hsien

AU - Hsu, Chih Hsun

AU - Lo, Hung Chun

AU - Chattopadhyay, Surojit

AU - Wu, Chien Ting

AU - Hwang, Jih Shang

AU - Yang, Ying Jay

AU - Chen, L. I.Chyong

N1 - Funding Information: The authors would like to thank National Science Council, the AFOSR, Asian Office of Aerospace Research and Development and Army Research Office in Far East for financial support.

PY - 2005/10

Y1 - 2005/10

N2 - Well-aligned nanotip arrays were fabricated via a self-masking dry etching technique in an electron cyclotron resonance (ECR) plasma process. Nanotip arrays of Si, poly silicon, GaN, GaP, sapphire, and Al were fabricated. Simultaneous etching of the substrate and formation of silicon carbide (SiC) protecting caps are attributed to the nanotip formation. The ultra-low turn-on field for electron field emission as well as the surface enhanced Raman Spectroscopic study of Si nanotips is also demonstrated.

AB - Well-aligned nanotip arrays were fabricated via a self-masking dry etching technique in an electron cyclotron resonance (ECR) plasma process. Nanotip arrays of Si, poly silicon, GaN, GaP, sapphire, and Al were fabricated. Simultaneous etching of the substrate and formation of silicon carbide (SiC) protecting caps are attributed to the nanotip formation. The ultra-low turn-on field for electron field emission as well as the surface enhanced Raman Spectroscopic study of Si nanotips is also demonstrated.

KW - Chemical vapor deposition

KW - Electron cyclotron resonance

KW - Field emission

KW - Nanostructure

KW - Surface-enhanced Raman spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=32844465075&partnerID=8YFLogxK

U2 - 10.1142/S0219581X05003838

DO - 10.1142/S0219581X05003838

M3 - Article

AN - SCOPUS:32844465075

SN - 0219-581X

VL - 4

SP - 879

EP - 886

JO - International Journal of Nanoscience

JF - International Journal of Nanoscience

IS - 5-6

ER -

Generally applicable self-masking technique for nanotips array fabrication

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Keywords

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