Generally applicable self-masking technique for nanotips array fabrication

Kuei Hsien Chen; Chih Hsun Hsu; Hung Chun Lo; Surojit Chattopadhyay; Chien Ting Wu; Jih Shang Hwang; Debajyoti Das; Li Chyong Chen

doi:10.6180/jase.2004.7.3.01

Generally applicable self-masking technique for nanotips array fabrication

Kuei Hsien Chen^*, Chih Hsun Hsu, Hung Chun Lo, Surojit Chattopadhyay, Chien Ting Wu, Jih Shang Hwang, Debajyoti Das, Li Chyong Chen

^*Corresponding author for this work

Institute of Biophotonics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Well-aligned nanotip arrays were fabricated via a self-masking dry etching technique in an electron cyclotron resonance (ECR) plasma process. Nanotip arrays of Si, poly silicon, GaN, GaP, sapphire, and Al were fabricated. Simultaneous etching of the substrate and formation of silicon carbide (SiC) protecting caps are attributed to the nanotip formation. The ultra-low turn on filed for electron field emission as well as the surface enhanced Raman Spectroscopic study of Si nanotips is also demonstrated.

Original language	English
Pages (from-to)	129-134
Number of pages	6
Journal	Tamkang Journal of Science and Engineering
Volume	7
Issue number	3
DOIs	https://doi.org/10.6180/jase.2004.7.3.01
State	Published - 1 Sep 2004

Keywords

Field Emission
Nanotip
Surface Enhanced Raman Spectroscopy

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10.6180/jase.2004.7.3.01

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title = "Generally applicable self-masking technique for nanotips array fabrication",

abstract = "Well-aligned nanotip arrays were fabricated via a self-masking dry etching technique in an electron cyclotron resonance (ECR) plasma process. Nanotip arrays of Si, poly silicon, GaN, GaP, sapphire, and Al were fabricated. Simultaneous etching of the substrate and formation of silicon carbide (SiC) protecting caps are attributed to the nanotip formation. The ultra-low turn on filed for electron field emission as well as the surface enhanced Raman Spectroscopic study of Si nanotips is also demonstrated.",

keywords = "Field Emission, Nanotip, Surface Enhanced Raman Spectroscopy",

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T1 - Generally applicable self-masking technique for nanotips array fabrication

AU - Chen, Kuei Hsien

AU - Hsu, Chih Hsun

AU - Lo, Hung Chun

AU - Chattopadhyay, Surojit

AU - Wu, Chien Ting

AU - Hwang, Jih Shang

AU - Das, Debajyoti

AU - Chen, Li Chyong

PY - 2004/9/1

Y1 - 2004/9/1

N2 - Well-aligned nanotip arrays were fabricated via a self-masking dry etching technique in an electron cyclotron resonance (ECR) plasma process. Nanotip arrays of Si, poly silicon, GaN, GaP, sapphire, and Al were fabricated. Simultaneous etching of the substrate and formation of silicon carbide (SiC) protecting caps are attributed to the nanotip formation. The ultra-low turn on filed for electron field emission as well as the surface enhanced Raman Spectroscopic study of Si nanotips is also demonstrated.

AB - Well-aligned nanotip arrays were fabricated via a self-masking dry etching technique in an electron cyclotron resonance (ECR) plasma process. Nanotip arrays of Si, poly silicon, GaN, GaP, sapphire, and Al were fabricated. Simultaneous etching of the substrate and formation of silicon carbide (SiC) protecting caps are attributed to the nanotip formation. The ultra-low turn on filed for electron field emission as well as the surface enhanced Raman Spectroscopic study of Si nanotips is also demonstrated.

KW - Field Emission

KW - Nanotip

KW - Surface Enhanced Raman Spectroscopy

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DO - 10.6180/jase.2004.7.3.01

M3 - Article

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SN - 1560-6686

VL - 7

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EP - 134

JO - Tamkang Journal of Science and Engineering

JF - Tamkang Journal of Science and Engineering

IS - 3

ER -

Generally applicable self-masking technique for nanotips array fabrication

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Keywords

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