Ge Single-Crystal-Island (Ge-SCI) Technique and BEOL Ge FinFET Switch Arrays on Top of Si Circuits for Monolithic 3D Voltage Regulators

Hao Tung Chung, Bo Jheng Shih, Chih Chao Yang, Nei Chih Lin, Po Tsang Huang*, Yun Ping Lan, Kuan Fu Lai, Wan Ting Hsu, Yu Ming Pan, Zhong Jie Hong, Han Wen Hu, Huang Chung Cheng, Chang Hong Shen, Jia Min Shieh, Fu Kuo Hsueh, Bo Yuan Chen, Da Chiang Chang, Wen-Kuan Yeh, Kuan Neng Chen, Chenming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A Ge single-crystal-island (Ge-SCI) technique and thus fabricated monolithic 3D back-end of line (BEOL) Ge FinFET were demonstrated for the first time. The Ge-SCI laser crystallization step results in minimal heating of the underlying Si substrate (T<155°C according to thermal simulation) and the Ge circuit fabrication temperature was kept below 400°C. The functionality of the underlying Si standard logic cells and a 19-stage ring oscillator were unaffected by the Ge-SCI FinFET process as required for a monolithic 3D technology. Simulation results of a monolithic 3D voltage regulator (FIVR) shows Ge-SCI FinFET switch achieving 1.6x response time improvement and 36% reduction in voltage droop compared to the same design implemented with BEOL Si FinFETs.

Original languageEnglish
Title of host publication2021 IEEE International Electron Devices Meeting, IEDM 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages34.5.1-34.5.4
ISBN (Electronic)9781665425728
DOIs
StatePublished - 2021
Event2021 IEEE International Electron Devices Meeting, IEDM 2021 - San Francisco, United States
Duration: 11 Dec 202116 Dec 2021

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2021-December
ISSN (Print)0163-1918

Conference

Conference2021 IEEE International Electron Devices Meeting, IEDM 2021
Country/TerritoryUnited States
CitySan Francisco
Period11/12/2116/12/21

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