@inproceedings{1807f98af9964655963a0147639482fb,
title = "Ge Single-Crystal-Island (Ge-SCI) Technique and BEOL Ge FinFET Switch Arrays on Top of Si Circuits for Monolithic 3D Voltage Regulators",
abstract = "A Ge single-crystal-island (Ge-SCI) technique and thus fabricated monolithic 3D back-end of line (BEOL) Ge FinFET were demonstrated for the first time. The Ge-SCI laser crystallization step results in minimal heating of the underlying Si substrate (T<155°C according to thermal simulation) and the Ge circuit fabrication temperature was kept below 400°C. The functionality of the underlying Si standard logic cells and a 19-stage ring oscillator were unaffected by the Ge-SCI FinFET process as required for a monolithic 3D technology. Simulation results of a monolithic 3D voltage regulator (FIVR) shows Ge-SCI FinFET switch achieving 1.6x response time improvement and 36% reduction in voltage droop compared to the same design implemented with BEOL Si FinFETs.",
author = "Chung, {Hao Tung} and Shih, {Bo Jheng} and Yang, {Chih Chao} and Lin, {Nei Chih} and Huang, {Po Tsang} and Lan, {Yun Ping} and Lai, {Kuan Fu} and Hsu, {Wan Ting} and Pan, {Yu Ming} and Hong, {Zhong Jie} and Hu, {Han Wen} and Cheng, {Huang Chung} and Shen, {Chang Hong} and Shieh, {Jia Min} and Hsueh, {Fu Kuo} and Chen, {Bo Yuan} and Chang, {Da Chiang} and Wen-Kuan Yeh and Chen, {Kuan Neng} and Chenming Hu",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Electron Devices Meeting, IEDM 2021 ; Conference date: 11-12-2021 Through 16-12-2021",
year = "2021",
doi = "10.1109/IEDM19574.2021.9720512",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "34.5.1--34.5.4",
booktitle = "2021 IEEE International Electron Devices Meeting, IEDM 2021",
address = "United States",
}