Ge pMOSFETs with MOCVD HfO2 gate dielectric

Wu Nan; Zhang Qingchun; Zhu Chunxiang; M. F. Li; D. S.H. Chan; Albert Chin; D. L. Kwong; L. K. Bera; N. Balasubramanian; A. Y. Du; C. H. Tung; Haitao Liu; Johnny K.O. Sins

doi:10.1109/ISDRS.2003.1272084

Ge pMOSFETs with MOCVD HfO₂ gate dielectric

Wu Nan, Zhang Qingchun, Zhu Chunxiang, M. F. Li, D. S.H. Chan, Albert Chin, D. L. Kwong, L. K. Bera, N. Balasubramanian, A. Y. Du, C. H. Tung, Haitao Liu, Johnny K.O. Sins

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

With research on high-k gate dielectric for VLSI applications, Ge has been attractive for alternative channel material due to its high electron and hole mobility [1, 2]. Furthermore, Ge substrate is also a potential choice for supply voltage scaling down to meet ITRS requirements [3]. Recently, mobility enhancements of germanium pMOSFETs have been demonstrated by using Ge oxynitride, ultra-thin ZrO₂ and A1₂O₃ [4-6]. W.P. Bai also reported high quality Ge MOS-C with HfO₂ [7]. However, the material property of MOCVD HfO₂ on Ge is not well-known yet, neither the performance of MOSFETs. In this work, we report our findings along the device fabrication as well as the well-behaved pMOSFET transistor characteristics.

Original language	English
Title of host publication	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	252-253
Number of pages	2
ISBN (Electronic)	0780381394, 9780780381391
DOIs	https://doi.org/10.1109/ISDRS.2003.1272084
State	Published - 2003
Event	International Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States Duration: 10 Dec 2003 → 12 Dec 2003

Publication series

Name	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Conference

Conference	International Semiconductor Device Research Symposium, ISDRS 2003
Country/Territory	United States
City	Washington
Period	10/12/03 → 12/12/03

Access to Document

10.1109/ISDRS.2003.1272084

Cite this

Nan, W., Qingchun, Z., Chunxiang, Z., Li, M. F., Chan, D. S. H., Chin, A., Kwong, D. L., Bera, L. K., Balasubramanian, N., Du, A. Y., Tung, C. H., Liu, H., & Sins, J. K. O. (2003). Ge pMOSFETs with MOCVD HfO₂ gate dielectric. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (pp. 252-253). Article 1272084 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1272084

@inproceedings{a07db347e49d41ca942d3ff4bcecbf34,

title = "Ge pMOSFETs with MOCVD HfO2 gate dielectric",

abstract = "With research on high-k gate dielectric for VLSI applications, Ge has been attractive for alternative channel material due to its high electron and hole mobility [1, 2]. Furthermore, Ge substrate is also a potential choice for supply voltage scaling down to meet ITRS requirements [3]. Recently, mobility enhancements of germanium pMOSFETs have been demonstrated by using Ge oxynitride, ultra-thin ZrO2 and A12O3 [4-6]. W.P. Bai also reported high quality Ge MOS-C with HfO2 [7]. However, the material property of MOCVD HfO2 on Ge is not well-known yet, neither the performance of MOSFETs. In this work, we report our findings along the device fabrication as well as the well-behaved pMOSFET transistor characteristics.",

author = "Wu Nan and Zhang Qingchun and Zhu Chunxiang and Li, {M. F.} and Chan, {D. S.H.} and Albert Chin and Kwong, {D. L.} and Bera, {L. K.} and N. Balasubramanian and Du, {A. Y.} and Tung, {C. H.} and Haitao Liu and Sins, {Johnny K.O.}",

year = "2003",

doi = "10.1109/ISDRS.2003.1272084",

language = "English",

series = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "252--253",

booktitle = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",

address = "美國",

note = "International Semiconductor Device Research Symposium, ISDRS 2003 ; Conference date: 10-12-2003 Through 12-12-2003",

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Nan, W, Qingchun, Z, Chunxiang, Z, Li, MF, Chan, DSH, Chin, A, Kwong, DL, Bera, LK, Balasubramanian, N, Du, AY, Tung, CH, Liu, H & Sins, JKO 2003, Ge pMOSFETs with MOCVD HfO₂ gate dielectric. in 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings., 1272084, 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 252-253, International Semiconductor Device Research Symposium, ISDRS 2003, Washington, United States, 10/12/03. https://doi.org/10.1109/ISDRS.2003.1272084

Ge pMOSFETs with MOCVD HfO₂ gate dielectric. / Nan, Wu; Qingchun, Zhang; Chunxiang, Zhu et al.
2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 252-253 1272084 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Nan, Wu

AU - Qingchun, Zhang

AU - Chunxiang, Zhu

AU - Li, M. F.

AU - Chan, D. S.H.

AU - Chin, Albert

AU - Kwong, D. L.

AU - Bera, L. K.

AU - Balasubramanian, N.

AU - Du, A. Y.

AU - Tung, C. H.

AU - Liu, Haitao

AU - Sins, Johnny K.O.

PY - 2003

Y1 - 2003

N2 - With research on high-k gate dielectric for VLSI applications, Ge has been attractive for alternative channel material due to its high electron and hole mobility [1, 2]. Furthermore, Ge substrate is also a potential choice for supply voltage scaling down to meet ITRS requirements [3]. Recently, mobility enhancements of germanium pMOSFETs have been demonstrated by using Ge oxynitride, ultra-thin ZrO2 and A12O3 [4-6]. W.P. Bai also reported high quality Ge MOS-C with HfO2 [7]. However, the material property of MOCVD HfO2 on Ge is not well-known yet, neither the performance of MOSFETs. In this work, we report our findings along the device fabrication as well as the well-behaved pMOSFET transistor characteristics.

AB - With research on high-k gate dielectric for VLSI applications, Ge has been attractive for alternative channel material due to its high electron and hole mobility [1, 2]. Furthermore, Ge substrate is also a potential choice for supply voltage scaling down to meet ITRS requirements [3]. Recently, mobility enhancements of germanium pMOSFETs have been demonstrated by using Ge oxynitride, ultra-thin ZrO2 and A12O3 [4-6]. W.P. Bai also reported high quality Ge MOS-C with HfO2 [7]. However, the material property of MOCVD HfO2 on Ge is not well-known yet, neither the performance of MOSFETs. In this work, we report our findings along the device fabrication as well as the well-behaved pMOSFET transistor characteristics.

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EP - 253

BT - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Semiconductor Device Research Symposium, ISDRS 2003

Y2 - 10 December 2003 through 12 December 2003

ER -

Nan W, Qingchun Z, Chunxiang Z, Li MF, Chan DSH, Chin A et al. Ge pMOSFETs with MOCVD HfO₂ gate dielectric. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 252-253. 1272084. (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). doi: 10.1109/ISDRS.2003.1272084