Ge channel MOSFETs directly on silicon

Che Wei Chen; Cheng Ting Chung; Chao-Hsin Chien

doi:10.1109/EDSSC.2014.7061261

Ge channel MOSFETs directly on silicon

Che Wei Chen, Cheng Ting Chung, Chao-Hsin Chien

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents high performance Ge/Si diode, trigate Ge PFET, junctionless trigate Ge PFET and strained Ge NFET directly on Si wafer. The leakage current of the Ge/Si diode is as low as <10^-7 A/cm². Trigate PFET depicts a driving current of 22 μA/μm at V_G = -2 V and a low OFF-current of 3 nA/μm at V_G = 2 V. Junctionless trigate PFET shows I_ON/I_OFF ratio of ∼6×10⁴ (I_D), ∼6×10⁵ (I_S), and the remarkably low off-current of 450 pA/μm at V_D = -0.1 V. Strained trigate Ge NFET is demonstrated.

Original language	English
Title of host publication	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479923342
DOIs	https://doi.org/10.1109/EDSSC.2014.7061261
State	Published - 13 Mar 2014
Event	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 - Chengdu, China Duration: 18 Jun 2014 → 20 Jun 2014

Publication series

Name	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

Conference

Conference	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
Country/Territory	China
City	Chengdu
Period	18/06/14 → 20/06/14

Keywords

diode
germanium
junctionless
trigate

Access to Document

10.1109/EDSSC.2014.7061261

Cite this

Chen, C. W., Chung, C. T., & Chien, C-H. (2014). Ge channel MOSFETs directly on silicon. In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 [7061261] (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2014.7061261

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title = "Ge channel MOSFETs directly on silicon",

abstract = "This paper presents high performance Ge/Si diode, trigate Ge PFET, junctionless trigate Ge PFET and strained Ge NFET directly on Si wafer. The leakage current of the Ge/Si diode is as low as <10-7 A/cm2. Trigate PFET depicts a driving current of 22 μA/μm at VG = -2 V and a low OFF-current of 3 nA/μm at VG = 2 V. Junctionless trigate PFET shows ION/IOFF ratio of ∼6×104 (ID), ∼6×105 (IS), and the remarkably low off-current of 450 pA/μm at VD = -0.1 V. Strained trigate Ge NFET is demonstrated.",

keywords = "diode, germanium, junctionless, trigate",

author = "Chen, {Che Wei} and Chung, {Cheng Ting} and Chao-Hsin Chien",

year = "2014",

month = mar,

day = "13",

doi = "10.1109/EDSSC.2014.7061261",

language = "English",

series = "2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014",

address = "United States",

note = "null ; Conference date: 18-06-2014 Through 20-06-2014",

}

Chen, CW, Chung, CT & Chien, C-H 2014, Ge channel MOSFETs directly on silicon. in 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014., 7061261, 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014, Institute of Electrical and Electronics Engineers Inc., 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014, Chengdu, China, 18/06/14. https://doi.org/10.1109/EDSSC.2014.7061261

Ge channel MOSFETs directly on silicon. / Chen, Che Wei; Chung, Cheng Ting; Chien, Chao-Hsin.

2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 7061261 (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Ge channel MOSFETs directly on silicon

AU - Chen, Che Wei

AU - Chung, Cheng Ting

AU - Chien, Chao-Hsin

PY - 2014/3/13

Y1 - 2014/3/13

N2 - This paper presents high performance Ge/Si diode, trigate Ge PFET, junctionless trigate Ge PFET and strained Ge NFET directly on Si wafer. The leakage current of the Ge/Si diode is as low as <10-7 A/cm2. Trigate PFET depicts a driving current of 22 μA/μm at VG = -2 V and a low OFF-current of 3 nA/μm at VG = 2 V. Junctionless trigate PFET shows ION/IOFF ratio of ∼6×104 (ID), ∼6×105 (IS), and the remarkably low off-current of 450 pA/μm at VD = -0.1 V. Strained trigate Ge NFET is demonstrated.

AB - This paper presents high performance Ge/Si diode, trigate Ge PFET, junctionless trigate Ge PFET and strained Ge NFET directly on Si wafer. The leakage current of the Ge/Si diode is as low as <10-7 A/cm2. Trigate PFET depicts a driving current of 22 μA/μm at VG = -2 V and a low OFF-current of 3 nA/μm at VG = 2 V. Junctionless trigate PFET shows ION/IOFF ratio of ∼6×104 (ID), ∼6×105 (IS), and the remarkably low off-current of 450 pA/μm at VD = -0.1 V. Strained trigate Ge NFET is demonstrated.

KW - diode

KW - germanium

KW - junctionless

KW - trigate

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U2 - 10.1109/EDSSC.2014.7061261

DO - 10.1109/EDSSC.2014.7061261

M3 - Conference contribution

AN - SCOPUS:84949925730

T3 - 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

BT - 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 18 June 2014 through 20 June 2014

ER -

Ge channel MOSFETs directly on silicon

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