Gate-stack engineering for self-organized Ge-dot/SiO ₂ /SiGe-shell MOS capacitors

Keyphrases

• SiGe 100%
• Silica 100%
• Gate Stack 100%
• Metal-oxide-semiconductor Capacitor (MOSCAP) 100%
• Ge Dot 100%
• Stack Engineering 100%
• Heterostructure 20%
• Silicon Nitride 10%
• Single-crystalline 10%
• Si Substrate 10%
• Transmission Electron Microscopy 10%
• Nanopatterning 10%
• Tunability 10%
• Good Quality 10%
• Temperature Effect 10%
• Shell Thickness 10%
• Buffer Layer 10%
• Capacitance-voltage Measurements 10%
• Energy Dispersive X-ray Spectroscopy 10%
• Interface Traps 10%
• Dot Size 10%
• Metal-oxide-semiconductor Devices 10%
• Metal Oxide Semiconductor 10%
• Crystalline Si 10%
• NiGe 10%
• Selective Oxidation 10%
• Fixed Charge Density 10%
• Interfacial Properties 10%
• High-low Frequency 10%
• Nanoelectronic Applications 10%
• Self-aligned Top-gate 10%
• Ge-based 10%
• Compressive Stress State 10%
• Nanophotonic Applications 10%

Material Science

• Capacitor 100%
• Metal Oxide 100%
• Oxide Semiconductor 100%
• Density 50%
• Heterojunction 50%
• Transmission Electron Microscopy 25%
• Capacitance 25%
• Buffer Layer 25%
• Interface Property 25%
• Energy-Dispersive X-Ray Spectroscopy 25%
• Semiconductor Device 25%
• Selective Oxidation 25%