Gate-oxide reliability on CMOS analog amplifiers in a 130-nm low-voltage CMOS processes

Jung Sheng Chen; Ming-Dou Ker

doi:10.1109/IPFA.2006.250994

Gate-oxide reliability on CMOS analog amplifiers in a 130-nm low-voltage CMOS processes

Jung Sheng Chen^*, Ming-Dou Ker

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

The effect of gate-oxide reliability in MOSFET on common-source amplifiers is investigated with the non-stacked and stacked structures in a 130-nm low-voltage CMOS process. The supply voltage of 2.5 V is applied on the amplifiers to accelerate and observe the impact of gate-oxide reliability on circuit performances including small-signal gain, unity-gain frequency, and output DC voltage level under DC stress and AC stress with DC offset, respectively. The small-signal parameters of amplifier with non-stacked structure strongly degrade under such overstress conditions. The gate-oxide reliability in analog circuit can be improved by stacked structure for small-signal input and output applications.

Original language	English
Title of host publication	Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
Pages	45-48
Number of pages	4
DOIs	https://doi.org/10.1109/IPFA.2006.250994
State	Published - 2006
Event	13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 - Singapore, Singapore Duration: 3 Jul 2006 → 7 Jul 2006

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
Country/Territory	Singapore
City	Singapore
Period	3/07/06 → 7/07/06

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10.1109/IPFA.2006.250994

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Chen, J. S., & Ker, M.-D. (2006). Gate-oxide reliability on CMOS analog amplifiers in a 130-nm low-voltage CMOS processes. In Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 (pp. 45-48). Article 4017019 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2006.250994

@inproceedings{df9bc5d1fc6249719d187f19f53e6c29,

title = "Gate-oxide reliability on CMOS analog amplifiers in a 130-nm low-voltage CMOS processes",

abstract = "The effect of gate-oxide reliability in MOSFET on common-source amplifiers is investigated with the non-stacked and stacked structures in a 130-nm low-voltage CMOS process. The supply voltage of 2.5 V is applied on the amplifiers to accelerate and observe the impact of gate-oxide reliability on circuit performances including small-signal gain, unity-gain frequency, and output DC voltage level under DC stress and AC stress with DC offset, respectively. The small-signal parameters of amplifier with non-stacked structure strongly degrade under such overstress conditions. The gate-oxide reliability in analog circuit can be improved by stacked structure for small-signal input and output applications.",

author = "Chen, {Jung Sheng} and Ming-Dou Ker",

year = "2006",

doi = "10.1109/IPFA.2006.250994",

language = "English",

isbn = "1424402069",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

pages = "45--48",

booktitle = "Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006",

note = "13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 ; Conference date: 03-07-2006 Through 07-07-2006",

}

Chen, JS & Ker, M-D 2006, Gate-oxide reliability on CMOS analog amplifiers in a 130-nm low-voltage CMOS processes. in Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006., 4017019, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, pp. 45-48, 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006, Singapore, Singapore, 3/07/06. https://doi.org/10.1109/IPFA.2006.250994

Gate-oxide reliability on CMOS analog amplifiers in a 130-nm low-voltage CMOS processes. / Chen, Jung Sheng; Ker, Ming-Dou.
Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. p. 45-48 4017019 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The effect of gate-oxide reliability in MOSFET on common-source amplifiers is investigated with the non-stacked and stacked structures in a 130-nm low-voltage CMOS process. The supply voltage of 2.5 V is applied on the amplifiers to accelerate and observe the impact of gate-oxide reliability on circuit performances including small-signal gain, unity-gain frequency, and output DC voltage level under DC stress and AC stress with DC offset, respectively. The small-signal parameters of amplifier with non-stacked structure strongly degrade under such overstress conditions. The gate-oxide reliability in analog circuit can be improved by stacked structure for small-signal input and output applications.

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Chen JS, Ker MD. Gate-oxide reliability on CMOS analog amplifiers in a 130-nm low-voltage CMOS processes. In Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. p. 45-48. 4017019. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2006.250994

Gate-oxide reliability on CMOS analog amplifiers in a 130-nm low-voltage CMOS processes

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