Gate-first TaN/La2O3/SiO2/Ge n-MOSFETs using laser annealing

W. B. Chen; C. H. Wu; B. S. Shie; Albert Chin

doi:10.1109/LED.2010.2063692

Gate-first TaN/La₂O₃/SiO₂/Ge n-MOSFETs using laser annealing

W. B. Chen, C. H. Wu, B. S. Shie, Albert Chin

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

To improve device performance, laser annealing was applied to Ge n-MOSFETs, which gave a low sheet resistance of 68 Ω/sq, a small ideality factor of 1.3, and a large ∼10⁵ forward\reverse current in the sourcedrain n⁺p junction. The laser-annealed gate-first TaN/La₂O ₃SiO₂Ge n-MOSFETs showed a high mobility of 603 cm ₂Vs and a good mobility of 304 cm²Vs at a 1.9-nm equivalent oxide thickness.

Original language	English
Article number	5560719
Pages (from-to)	1184-1186
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	11
DOIs	https://doi.org/10.1109/LED.2010.2063692
State	Published - 1 Nov 2010

Keywords

Ge
high-κ gate dielectric
laser annealing

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10.1109/LED.2010.2063692

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title = "Gate-first TaN/La2O3/SiO2/Ge n-MOSFETs using laser annealing",

abstract = "To improve device performance, laser annealing was applied to Ge n-MOSFETs, which gave a low sheet resistance of 68 Ω/sq, a small ideality factor of 1.3, and a large ∼105 forward\reverse current in the sourcedrain n+p junction. The laser-annealed gate-first TaN/La2O 3SiO2Ge n-MOSFETs showed a high mobility of 603 cm 2Vs and a good mobility of 304 cm2Vs at a 1.9-nm equivalent oxide thickness.",

keywords = "Ge, high-κ gate dielectric, laser annealing",

author = "Chen, {W. B.} and Wu, {C. H.} and Shie, {B. S.} and Albert Chin",

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AU - Chen, W. B.

AU - Wu, C. H.

AU - Shie, B. S.

AU - Chin, Albert

PY - 2010/11/1

Y1 - 2010/11/1

N2 - To improve device performance, laser annealing was applied to Ge n-MOSFETs, which gave a low sheet resistance of 68 Ω/sq, a small ideality factor of 1.3, and a large ∼105 forward\reverse current in the sourcedrain n+p junction. The laser-annealed gate-first TaN/La2O 3SiO2Ge n-MOSFETs showed a high mobility of 603 cm 2Vs and a good mobility of 304 cm2Vs at a 1.9-nm equivalent oxide thickness.

AB - To improve device performance, laser annealing was applied to Ge n-MOSFETs, which gave a low sheet resistance of 68 Ω/sq, a small ideality factor of 1.3, and a large ∼105 forward\reverse current in the sourcedrain n+p junction. The laser-annealed gate-first TaN/La2O 3SiO2Ge n-MOSFETs showed a high mobility of 603 cm 2Vs and a good mobility of 304 cm2Vs at a 1.9-nm equivalent oxide thickness.

KW - Ge

KW - high-κ gate dielectric

KW - laser annealing

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M1 - 5560719

ER -

Gate-first TaN/La₂O₃/SiO₂/Ge n-MOSFETs using laser annealing

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Keywords

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