Gate Current in OFF-State MOSFET

Jian Chen*, Tung Yi Chan, Ping Keung Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


The source of the gate current in MOSFET’s due to an applied drain voltage with the gate grounded is studied. It is found that for 100 Å or thinner oxide, the gate current is due to Fowler-Nordheim (F-N) tunneling of electrons from the gate. With increasing oxide thickness, hot-hole injection becomes the dominant contribution to the gate current. This gate current can cause IDwalkout, which is a decrease in the gate-induced drain leakage current, and hole trapping which becomes important for device degradation study. It can also be used to advantage in EPROM erasure.

Original languageEnglish
Pages (from-to)203-205
Number of pages3
JournalIEEE Electron Device Letters
Issue number5
StatePublished - May 1989


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