Gate-all-around floating-gate memory device with triangular poly-Si nanowire channels

Keyphrases

• Poly-Si Nanowire 100%
• Memory Device 100%
• Gate-all-around 100%
• Nanowire Channel 100%
• Floating Gate Memory 100%
• Poly-Si 33%
• Electron Tunneling 33%
• Tunnel Oxide 33%
• Electron Injection 33%
• Operation Voltage 33%
• Oxide Layer 33%
• Floating Gate 33%
• Enhanced Electric Field 33%
• Technology Computer-aided Design Simulation 33%
• Nonlocalized 33%

Engineering

• Si Nanowires 100%
• Floating Gate 100%
• Nanowires 66%
• Computer Aided Design 33%
• Electric Field 33%
• Tunnel Construction 33%
• Oxide Layer 33%
• Characteristic Feature 33%

Material Science

• Nanowire 100%
• Oxide Compound 33%