Ga0.5in0.5P barrier layer for wet oxidation of AlAs

Shih Chang Lee; Wei-I Lee

doi:10.1143/JJAP.39.2583

Ga_0.5in_0.5P barrier layer for wet oxidation of AlAs

Shih Chang Lee^*, Wei-I Lee

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We study the stability of Ga_0.5In_0.5P and Al_0.4Ga_0.6As barrier layers for wet thermal oxidation of AlAs on GaAs. Samples with a Ga_0.5In_0.5P or Al_0.4Ga_0.6As barrier layer are oxidized in a water vapor environment under various oxidation conditions. The results of photoluminescence and secondary-ion mass spectrometry (SIMS) depth profile measurements indicate that the Ga_0.5In_0.5P barrier layer is more stable than the Al_0.4Ga_0.6As layer at higher oxidation temperatures and longer periods of oxidation time.

Original language	English
Pages (from-to)	2583-2584
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	5 A
DOIs	https://doi.org/10.1143/JJAP.39.2583
State	Published - 1 May 2000

Keywords

AiGaAs
AlAs
GaAs
GaInp
Interface
Wet oxidation

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10.1143/JJAP.39.2583

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title = "Ga0.5in0.5P barrier layer for wet oxidation of AlAs",

abstract = "We study the stability of Ga0.5In0.5P and Al0.4Ga0.6As barrier layers for wet thermal oxidation of AlAs on GaAs. Samples with a Ga0.5In0.5P or Al0.4Ga0.6As barrier layer are oxidized in a water vapor environment under various oxidation conditions. The results of photoluminescence and secondary-ion mass spectrometry (SIMS) depth profile measurements indicate that the Ga0.5In0.5P barrier layer is more stable than the Al0.4Ga0.6As layer at higher oxidation temperatures and longer periods of oxidation time.",

keywords = "AiGaAs, AlAs, GaAs, GaInp, Interface, Wet oxidation",

author = "Lee, {Shih Chang} and Wei-I Lee",

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doi = "10.1143/JJAP.39.2583",

language = "English",

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T1 - Ga0.5in0.5P barrier layer for wet oxidation of AlAs

AU - Lee, Shih Chang

AU - Lee, Wei-I

PY - 2000/5/1

Y1 - 2000/5/1

N2 - We study the stability of Ga0.5In0.5P and Al0.4Ga0.6As barrier layers for wet thermal oxidation of AlAs on GaAs. Samples with a Ga0.5In0.5P or Al0.4Ga0.6As barrier layer are oxidized in a water vapor environment under various oxidation conditions. The results of photoluminescence and secondary-ion mass spectrometry (SIMS) depth profile measurements indicate that the Ga0.5In0.5P barrier layer is more stable than the Al0.4Ga0.6As layer at higher oxidation temperatures and longer periods of oxidation time.

AB - We study the stability of Ga0.5In0.5P and Al0.4Ga0.6As barrier layers for wet thermal oxidation of AlAs on GaAs. Samples with a Ga0.5In0.5P or Al0.4Ga0.6As barrier layer are oxidized in a water vapor environment under various oxidation conditions. The results of photoluminescence and secondary-ion mass spectrometry (SIMS) depth profile measurements indicate that the Ga0.5In0.5P barrier layer is more stable than the Al0.4Ga0.6As layer at higher oxidation temperatures and longer periods of oxidation time.

KW - AiGaAs

KW - AlAs

KW - GaAs

KW - GaInp

KW - Interface

KW - Wet oxidation

UR - http://www.scopus.com/inward/record.url?scp=0033690679&partnerID=8YFLogxK

U2 - 10.1143/JJAP.39.2583

DO - 10.1143/JJAP.39.2583

M3 - Article

AN - SCOPUS:0033690679

SN - 0021-4922

VL - 39

SP - 2583

EP - 2584

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 5 A

ER -

Ga_0.5in_0.5P barrier layer for wet oxidation of AlAs

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Keywords

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