Gas sensing ability on polycrystalline-silicon nanowire

Yen Ren Lo; Huang-Ming Chen; Yuh-Shyong Yang; Ming Pei Lu

doi:10.1149/2.0161807jss

Gas sensing ability on polycrystalline-silicon nanowire

Yen Ren Lo, Huang-Ming Chen, Yuh-Shyong Yang, Ming Pei Lu

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Trace of protic gases can alter the conductivity of the polycrystalline silicon nanowire (poly-Si NW) field effect transistor (FET). The aprotic gases have no effect on the electrical parameters. The proposed mechanism is due to the surface grain boundary of poly-Si NW. The direct evidence is obtained from the comparison between single- and poly-Si NW. The electrical parameters are varied according to the relative humidity levels. Nevertheless, the water molecules can be removed by vacuum indicating that it is physical absorption on the surface. As a result, the poly-Si NW FET has potential to be a reusable device for protic gas sensor.

Original language	English
Pages (from-to)	Q3104-Q3107
Number of pages	4
Journal	ECS Journal of Solid State Science and Technology
Volume	7
Issue number	7
DOIs	https://doi.org/10.1149/2.0161807jss
State	Published - 13 Apr 2018

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title = "Gas sensing ability on polycrystalline-silicon nanowire",

abstract = "Trace of protic gases can alter the conductivity of the polycrystalline silicon nanowire (poly-Si NW) field effect transistor (FET). The aprotic gases have no effect on the electrical parameters. The proposed mechanism is due to the surface grain boundary of poly-Si NW. The direct evidence is obtained from the comparison between single- and poly-Si NW. The electrical parameters are varied according to the relative humidity levels. Nevertheless, the water molecules can be removed by vacuum indicating that it is physical absorption on the surface. As a result, the poly-Si NW FET has potential to be a reusable device for protic gas sensor.",

author = "Lo, {Yen Ren} and Huang-Ming Chen and Yuh-Shyong Yang and Lu, {Ming Pei}",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2018. Published by ECS.",

year = "2018",

month = apr,

day = "13",

doi = "10.1149/2.0161807jss",

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T1 - Gas sensing ability on polycrystalline-silicon nanowire

AU - Lo, Yen Ren

AU - Chen, Huang-Ming

AU - Yang, Yuh-Shyong

AU - Lu, Ming Pei

PY - 2018/4/13

Y1 - 2018/4/13

N2 - Trace of protic gases can alter the conductivity of the polycrystalline silicon nanowire (poly-Si NW) field effect transistor (FET). The aprotic gases have no effect on the electrical parameters. The proposed mechanism is due to the surface grain boundary of poly-Si NW. The direct evidence is obtained from the comparison between single- and poly-Si NW. The electrical parameters are varied according to the relative humidity levels. Nevertheless, the water molecules can be removed by vacuum indicating that it is physical absorption on the surface. As a result, the poly-Si NW FET has potential to be a reusable device for protic gas sensor.

AB - Trace of protic gases can alter the conductivity of the polycrystalline silicon nanowire (poly-Si NW) field effect transistor (FET). The aprotic gases have no effect on the electrical parameters. The proposed mechanism is due to the surface grain boundary of poly-Si NW. The direct evidence is obtained from the comparison between single- and poly-Si NW. The electrical parameters are varied according to the relative humidity levels. Nevertheless, the water molecules can be removed by vacuum indicating that it is physical absorption on the surface. As a result, the poly-Si NW FET has potential to be a reusable device for protic gas sensor.

UR - http://www.scopus.com/inward/record.url?scp=85051362666&partnerID=8YFLogxK

U2 - 10.1149/2.0161807jss

DO - 10.1149/2.0161807jss

M3 - Article

AN - SCOPUS:85051362666

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VL - 7

SP - Q3104-Q3107

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 7

ER -

Gas sensing ability on polycrystalline-silicon nanowire

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