GaN schottky barrier photodetectors

S. J. Chang; S. M. Wang; P. C. Chang; Cheng-Huang Kuo; S. J. Young; T. P. Chen; S. L. Wu; B. R. Huang

doi:10.1109/JSEN.2010.2045889

GaN schottky barrier photodetectors

S. J. Chang, S. M. Wang, P. C. Chang, Cheng-Huang Kuo, S. J. Young, T. P. Chen, S. L. Wu, B. R. Huang

College of Photonics

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10^-10 W and 2.26× 10⁹ cmHz 0.5 W^-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10^-6 W and 4.44× 10⁵ cmHz 0.5W^-1, respectively, for the PD prepared on a conventional sapphire substrate.

Original language	English
Article number	5482027
Pages (from-to)	1609-1614
Number of pages	6
Journal	IEEE Sensors Journal
Volume	10
Issue number	10
DOIs	https://doi.org/10.1109/JSEN.2010.2045889
State	Published - 2010

Keywords

Nanorod template
noise
photodetector
ultraviolet

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10.1109/JSEN.2010.2045889

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title = "GaN schottky barrier photodetectors",

abstract = "We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10-10 W and 2.26× 109 cmHz 0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10-6 W and 4.44× 105 cmHz 0.5W-1, respectively, for the PD prepared on a conventional sapphire substrate.",

keywords = "Nanorod template, noise, photodetector, ultraviolet",

author = "Chang, \{S. J.\} and Wang, \{S. M.\} and Chang, \{P. C.\} and Cheng-Huang Kuo and Young, \{S. J.\} and Chen, \{T. P.\} and Wu, \{S. L.\} and Huang, \{B. R.\}",

year = "2010",

doi = "10.1109/JSEN.2010.2045889",

language = "English",

volume = "10",

pages = "1609--1614",

journal = "IEEE Sensors Journal",

issn = "1530-437X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - GaN schottky barrier photodetectors

AU - Chang, S. J.

AU - Wang, S. M.

AU - Chang, P. C.

AU - Kuo, Cheng-Huang

AU - Young, S. J.

AU - Chen, T. P.

AU - Wu, S. L.

AU - Huang, B. R.

PY - 2010

Y1 - 2010

N2 - We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10-10 W and 2.26× 109 cmHz 0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10-6 W and 4.44× 105 cmHz 0.5W-1, respectively, for the PD prepared on a conventional sapphire substrate.

AB - We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10-10 W and 2.26× 109 cmHz 0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10-6 W and 4.44× 105 cmHz 0.5W-1, respectively, for the PD prepared on a conventional sapphire substrate.

KW - Nanorod template

KW - noise

KW - photodetector

KW - ultraviolet

UR - https://www.scopus.com/pages/publications/77955399652

U2 - 10.1109/JSEN.2010.2045889

DO - 10.1109/JSEN.2010.2045889

M3 - Article

AN - SCOPUS:77955399652

SN - 1530-437X

VL - 10

SP - 1609

EP - 1614

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

IS - 10

M1 - 5482027

ER -

GaN schottky barrier photodetectors

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Keywords

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