GaN schottky barrier photodetectors

S. J. Chang, S. M. Wang, P. C. Chang, Cheng-Huang Kuo, S. J. Young, T. P. Chen, S. L. Wu, B. R. Huang

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10-10 W and 2.26× 109 cmHz 0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10-6 W and 4.44× 105 cmHz 0.5W-1, respectively, for the PD prepared on a conventional sapphire substrate.

Original languageEnglish
Article number5482027
Pages (from-to)1609-1614
Number of pages6
JournalIEEE Sensors Journal
Volume10
Issue number10
DOIs
StatePublished - 13 Aug 2010

Keywords

  • Nanorod template
  • noise
  • photodetector
  • ultraviolet

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