GaN schottky barrier photodetectors

S. J. Chang, S. M. Wang, P. C. Chang, Cheng-Huang Kuo, S. J. Young, T. P. Chen, S. L. Wu, B. R. Huang

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10-10 W and 2.26× 109 cmHz 0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10-6 W and 4.44× 105 cmHz 0.5W-1, respectively, for the PD prepared on a conventional sapphire substrate.

Original languageEnglish
Article number5482027
Pages (from-to)1609-1614
Number of pages6
JournalIEEE Sensors Journal
Volume10
Issue number10
DOIs
StatePublished - 13 Aug 2010

Keywords

  • Nanorod template
  • noise
  • photodetector
  • ultraviolet

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