Abstract
We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10-10 W and 2.26× 109 cmHz 0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10-6 W and 4.44× 105 cmHz 0.5W-1, respectively, for the PD prepared on a conventional sapphire substrate.
Original language | English |
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Article number | 5482027 |
Pages (from-to) | 1609-1614 |
Number of pages | 6 |
Journal | IEEE Sensors Journal |
Volume | 10 |
Issue number | 10 |
DOIs | |
State | Published - 13 Aug 2010 |
Keywords
- Nanorod template
- noise
- photodetector
- ultraviolet