GaN on Si RF performance with different AlGaN back barrier

Chang Yan Hsieh; Hui Yu Chen; Po Tsung Tu; Jui Chin Chen; Hsin Yun Yang; Po Chun Yeh; De Hsieh; Hsueh Hsing Liu; Yi Keng Fu; Shyh Shyuan Sheu; Hao Chung Kuo; Yuh Renn Wu; Wei Chung Lo; Shih Chieh Chang

doi:10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134089

GaN on Si RF performance with different AlGaN back barrier

Chang Yan Hsieh, Hui Yu Chen, Po Tsung Tu, Jui Chin Chen, Hsin Yun Yang, Po Chun Yeh, De Hsieh, Hsueh Hsing Liu, Yi Keng Fu, Shyh Shyuan Sheu, Hao Chung Kuo, Yuh Renn Wu, Wei Chung Lo, Shih Chieh Chang

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, the DC and RF device performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) with different AlGaN back barrier thickness has been studied. The test results of the HEMTs with 50 nm back barrier exhibit Idssat=640 mA mm gm=405 mS mm, and on/off ratio = 1.5 E+04. In small-signal operation, cut-off frequency FT FMAX=59/127 GHz are achieved, which gives a high value of ( FT × Lg)=14.7 GHz ×μ m among the reported GaN-on-Si devices.

Original language	English
Title of host publication	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350334166
DOIs	https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134089
State	Published - 2023
Event	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, Taiwan Duration: 17 Apr 2023 → 20 Apr 2023

Publication series

Name	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
Country/Territory	Taiwan
City	Hsinchu
Period	17/04/23 → 20/04/23

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10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134089

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Hsieh, C. Y., Chen, H. Y., Tu, P. T., Chen, J. C., Yang, H. Y., Yeh, P. C., Hsieh, D., Liu, H. H., Fu, Y. K., Sheu, S. S., Kuo, H. C., Wu, Y. R., Lo, W. C., & Chang, S. C. (2023). GaN on Si RF performance with different AlGaN back barrier. In 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134089

Hsieh, Chang Yan ; Chen, Hui Yu ; Tu, Po Tsung et al. / GaN on Si RF performance with different AlGaN back barrier. 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).

@inproceedings{fdb00249bf8e4baf86a3a76878536060,

title = "GaN on Si RF performance with different AlGaN back barrier",

abstract = "In this paper, the DC and RF device performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) with different AlGaN back barrier thickness has been studied. The test results of the HEMTs with 50 nm back barrier exhibit Idssat=640 mA mm gm=405 mS mm, and on/off ratio = 1.5 E+04. In small-signal operation, cut-off frequency FT FMAX=59/127 GHz are achieved, which gives a high value of ( FT × Lg)=14.7 GHz ×μ m among the reported GaN-on-Si devices.",

author = "Hsieh, {Chang Yan} and Chen, {Hui Yu} and Tu, {Po Tsung} and Chen, {Jui Chin} and Yang, {Hsin Yun} and Yeh, {Po Chun} and De Hsieh and Liu, {Hsueh Hsing} and Fu, {Yi Keng} and Sheu, {Shyh Shyuan} and Kuo, {Hao Chung} and Wu, {Yuh Renn} and Lo, {Wei Chung} and Chang, {Shih Chieh}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 ; Conference date: 17-04-2023 Through 20-04-2023",

year = "2023",

doi = "10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134089",

language = "English",

series = "2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings",

address = "美國",

}

Hsieh, CY, Chen, HY, Tu, PT, Chen, JC, Yang, HY, Yeh, PC, Hsieh, D, Liu, HH, Fu, YK, Sheu, SS, Kuo, HC, Wu, YR, Lo, WC & Chang, SC 2023, GaN on Si RF performance with different AlGaN back barrier. in 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023, Hsinchu, Taiwan, 17/04/23. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134089

GaN on Si RF performance with different AlGaN back barrier. / Hsieh, Chang Yan; Chen, Hui Yu; Tu, Po Tsung et al.
2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - GaN on Si RF performance with different AlGaN back barrier

AU - Hsieh, Chang Yan

AU - Chen, Hui Yu

AU - Tu, Po Tsung

AU - Chen, Jui Chin

AU - Yang, Hsin Yun

AU - Yeh, Po Chun

AU - Hsieh, De

AU - Liu, Hsueh Hsing

AU - Fu, Yi Keng

AU - Sheu, Shyh Shyuan

AU - Kuo, Hao Chung

AU - Wu, Yuh Renn

AU - Lo, Wei Chung

AU - Chang, Shih Chieh

PY - 2023

Y1 - 2023

N2 - In this paper, the DC and RF device performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) with different AlGaN back barrier thickness has been studied. The test results of the HEMTs with 50 nm back barrier exhibit Idssat=640 mA mm gm=405 mS mm, and on/off ratio = 1.5 E+04. In small-signal operation, cut-off frequency FT FMAX=59/127 GHz are achieved, which gives a high value of ( FT × Lg)=14.7 GHz ×μ m among the reported GaN-on-Si devices.

AB - In this paper, the DC and RF device performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) with different AlGaN back barrier thickness has been studied. The test results of the HEMTs with 50 nm back barrier exhibit Idssat=640 mA mm gm=405 mS mm, and on/off ratio = 1.5 E+04. In small-signal operation, cut-off frequency FT FMAX=59/127 GHz are achieved, which gives a high value of ( FT × Lg)=14.7 GHz ×μ m among the reported GaN-on-Si devices.

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U2 - 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134089

DO - 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134089

M3 - Conference contribution

AN - SCOPUS:85163013946

T3 - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

BT - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023

Y2 - 17 April 2023 through 20 April 2023

ER -

Hsieh CY, Chen HY, Tu PT, Chen JC, Yang HY, Yeh PC et al. GaN on Si RF performance with different AlGaN back barrier. In 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings). doi: 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134089

GaN on Si RF performance with different AlGaN back barrier

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