GaN MSM photodetectors with TiW transparent electrodes

C. K. Wang, S. J. Chang*, Y. K. Su, C. S. Chang, Y. Z. Chiou, Cheng-Huang Kuo, T. K. Lin, T. K. Ko, J. J. Tang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

TiW films were deposited onto glass substrates and GaN epitaxial layers by RF magnetron sputtering. It was found that TiW film deposited with a 300 W RF power could provide us a high transmittance and a low resistivity. GaN-based ultraviolet metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that photocurrent to dark current contrast ratios were 4.35, 4.6 × 102 and 5.7 × 104 for the pholodetectors with ITO, TiN, and TiW electrodes, respectively. The large photocurrent to dark current contrast ratio could be attributed mainly to the fact that TiW can form a high Schottky barrier height on the surface of u-GaN epitaxial layers.

Original languageEnglish
Pages (from-to)25-29
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume112
Issue number1
DOIs
StatePublished - 15 Sep 2004

Keywords

  • GaN
  • ITO
  • MSM
  • Photodetectors
  • TiN
  • TiW
  • UV

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