GaN-based vertical-cavity surface-emitting laser incorporating a TiO2 high-index-contrast grating

Tsu Chi Chang; Ehsan Hashemi; Jörgen Bengtsson; Johan Gustavsson; Åsa Haglund; Tien Chang Lu

doi:10.1117/12.2545315

GaN-based vertical-cavity surface-emitting laser incorporating a TiO₂ high-index-contrast grating

Tsu Chi Chang, Ehsan Hashemi, Jörgen Bengtsson, Johan Gustavsson, Åsa Haglund, Tien Chang Lu

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrate the first electrically injected GaN-based VCSEL with a TiO₂ high-contrast grating (HCG) as the top mirror. The TiO₂-HCG rested directly on the n-GaN without an airgap for mechanical stability. A VCSEL with an aperture diameter of 10 μm had a threshold current of 25 mA under pulsed operation at room temperature. Multiple longitudinal modes coexist around 400 nm, each TM-polarized with a linewidth of 0.5 nm (spectral resolution limited). This first demonstration of a TiO₂-HCG VCSEL offers a new route to achieve polarization pinning and could also allow additional benefits such as post-growth setting of resonance wavelength.

Original language	English
Title of host publication	Gallium Nitride Materials and Devices XV
Editors	Hiroshi Fujioka, Hadis Morkoc, Ulrich T. Schwarz
Publisher	SPIE
ISBN (Electronic)	9781510633230
DOIs	https://doi.org/10.1117/12.2545315
State	Published - 1 Jan 2020
Event	Gallium Nitride Materials and Devices XV 2020 - San Francisco, United States Duration: 4 Feb 2020 → 6 Feb 2020

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	11280
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Gallium Nitride Materials and Devices XV 2020
Country/Territory	United States
City	San Francisco
Period	4/02/20 → 6/02/20

Keywords

Electrically driven device
GaN
HCG
High-index-contrast grating
Micro-cavity
Polarization selectivity
TiO
VCSEL
Vertical-cavity surface-emitting laser

Access to Document

10.1117/12.2545315

Cite this

Chang, T. C., Hashemi, E., Bengtsson, J., Gustavsson, J., Haglund, Å., & Lu, T. C. (2020). GaN-based vertical-cavity surface-emitting laser incorporating a TiO₂ high-index-contrast grating. In H. Fujioka, H. Morkoc, & U. T. Schwarz (Eds.), Gallium Nitride Materials and Devices XV Article 112800M (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11280). SPIE. https://doi.org/10.1117/12.2545315

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title = "GaN-based vertical-cavity surface-emitting laser incorporating a TiO2 high-index-contrast grating",

abstract = "We demonstrate the first electrically injected GaN-based VCSEL with a TiO2 high-contrast grating (HCG) as the top mirror. The TiO2-HCG rested directly on the n-GaN without an airgap for mechanical stability. A VCSEL with an aperture diameter of 10 μm had a threshold current of 25 mA under pulsed operation at room temperature. Multiple longitudinal modes coexist around 400 nm, each TM-polarized with a linewidth of 0.5 nm (spectral resolution limited). This first demonstration of a TiO2-HCG VCSEL offers a new route to achieve polarization pinning and could also allow additional benefits such as post-growth setting of resonance wavelength.",

keywords = "Electrically driven device, GaN, HCG, High-index-contrast grating, Micro-cavity, Polarization selectivity, TiO, VCSEL, Vertical-cavity surface-emitting laser",

author = "Chang, {Tsu Chi} and Ehsan Hashemi and J{\"o}rgen Bengtsson and Johan Gustavsson and {\AA}sa Haglund and Lu, {Tien Chang}",

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Chang, TC, Hashemi, E, Bengtsson, J, Gustavsson, J, Haglund, Å & Lu, TC 2020, GaN-based vertical-cavity surface-emitting laser incorporating a TiO₂ high-index-contrast grating. in H Fujioka, H Morkoc & UT Schwarz (eds), Gallium Nitride Materials and Devices XV., 112800M, Proceedings of SPIE - The International Society for Optical Engineering, vol. 11280, SPIE, Gallium Nitride Materials and Devices XV 2020, San Francisco, United States, 4/02/20. https://doi.org/10.1117/12.2545315

GaN-based vertical-cavity surface-emitting laser incorporating a TiO₂ high-index-contrast grating. / Chang, Tsu Chi; Hashemi, Ehsan; Bengtsson, Jörgen et al.
Gallium Nitride Materials and Devices XV. ed. / Hiroshi Fujioka; Hadis Morkoc; Ulrich T. Schwarz. SPIE, 2020. 112800M (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11280).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - We demonstrate the first electrically injected GaN-based VCSEL with a TiO2 high-contrast grating (HCG) as the top mirror. The TiO2-HCG rested directly on the n-GaN without an airgap for mechanical stability. A VCSEL with an aperture diameter of 10 μm had a threshold current of 25 mA under pulsed operation at room temperature. Multiple longitudinal modes coexist around 400 nm, each TM-polarized with a linewidth of 0.5 nm (spectral resolution limited). This first demonstration of a TiO2-HCG VCSEL offers a new route to achieve polarization pinning and could also allow additional benefits such as post-growth setting of resonance wavelength.

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Chang TC, Hashemi E, Bengtsson J, Gustavsson J, Haglund Å, Lu TC. GaN-based vertical-cavity surface-emitting laser incorporating a TiO₂ high-index-contrast grating. In Fujioka H, Morkoc H, Schwarz UT, editors, Gallium Nitride Materials and Devices XV. SPIE. 2020. 112800M. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2545315