GaN-based light-emitting diodes for vertical current injection by laser lift-off and wafer bonding techniques

Ray-Hua Horng; Kuan Fu Pan; Chia En Lee; Shao Hua Hung; Wen Yu Lin; Ying Yong Su; Chiao Chih Yang; Dong Sing Wuu

GaN-based light-emitting diodes for vertical current injection by laser lift-off and wafer bonding techniques

Ray-Hua Horng^*, Kuan Fu Pan, Chia En Lee, Shao Hua Hung, Wen Yu Lin, Ying Yong Su, Chiao Chih Yang, Dong Sing Wuu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to conference › Paper › peer-review

Abstract

This work reports a p-side-down GaN/mirror/Si light-emitting diode (LED) for vertical current injection fabricated by laser lift-off and wafer bonding techniques. The large area (1 mm×1 mm) GaN/mirror/Si LED with a platinum mirror presents a luminance intensity of 1456 mcd (@350mA) with a forward voltage of 3.96 V. The luminance intensity is two times in magnitude as compared with that of the original GaN/sapphire LED (456mcd, 4.2V @350mA). When the driving current increased to 1 A, the luminance intensity of GaN/mirror/Si LED achieved 2876 mcd, which was 2.8 times in magnitude as compared with that of the original planar GaN/sapphire LED (@1019mcd). These results indicate that the wafer bonding and laser lift-off techniques do not adversely affect the current-voltage characteristics of the LEDs. Furthermore, under high current injection, the GaN/mirror/Si LED presents the better performance due to the Si heat sink.

Original language	English
Pages	140-151
Number of pages	12
State	Published - May 2005
Event	207th ECS Meeting - Quebec, Canada Duration: 16 May 2005 → 20 May 2005

Conference

Conference	207th ECS Meeting
Country/Territory	Canada
City	Quebec
Period	16/05/05 → 20/05/05

Cite this

@conference{e2f0202549fe41e9be4eff03db0582a3,

title = "GaN-based light-emitting diodes for vertical current injection by laser lift-off and wafer bonding techniques",

abstract = "This work reports a p-side-down GaN/mirror/Si light-emitting diode (LED) for vertical current injection fabricated by laser lift-off and wafer bonding techniques. The large area (1 mm×1 mm) GaN/mirror/Si LED with a platinum mirror presents a luminance intensity of 1456 mcd (@350mA) with a forward voltage of 3.96 V. The luminance intensity is two times in magnitude as compared with that of the original GaN/sapphire LED (456mcd, 4.2V @350mA). When the driving current increased to 1 A, the luminance intensity of GaN/mirror/Si LED achieved 2876 mcd, which was 2.8 times in magnitude as compared with that of the original planar GaN/sapphire LED (@1019mcd). These results indicate that the wafer bonding and laser lift-off techniques do not adversely affect the current-voltage characteristics of the LEDs. Furthermore, under high current injection, the GaN/mirror/Si LED presents the better performance due to the Si heat sink.",

author = "Ray-Hua Horng and Pan, {Kuan Fu} and Lee, {Chia En} and Hung, {Shao Hua} and Lin, {Wen Yu} and Su, {Ying Yong} and Yang, {Chiao Chih} and Wuu, {Dong Sing}",

year = "2005",

month = may,

language = "English",

pages = "140--151",

note = "207th ECS Meeting ; Conference date: 16-05-2005 Through 20-05-2005",

}

TY - CONF

T1 - GaN-based light-emitting diodes for vertical current injection by laser lift-off and wafer bonding techniques

AU - Horng, Ray-Hua

AU - Pan, Kuan Fu

AU - Lee, Chia En

AU - Hung, Shao Hua

AU - Lin, Wen Yu

AU - Su, Ying Yong

AU - Yang, Chiao Chih

AU - Wuu, Dong Sing

PY - 2005/5

Y1 - 2005/5

N2 - This work reports a p-side-down GaN/mirror/Si light-emitting diode (LED) for vertical current injection fabricated by laser lift-off and wafer bonding techniques. The large area (1 mm×1 mm) GaN/mirror/Si LED with a platinum mirror presents a luminance intensity of 1456 mcd (@350mA) with a forward voltage of 3.96 V. The luminance intensity is two times in magnitude as compared with that of the original GaN/sapphire LED (456mcd, 4.2V @350mA). When the driving current increased to 1 A, the luminance intensity of GaN/mirror/Si LED achieved 2876 mcd, which was 2.8 times in magnitude as compared with that of the original planar GaN/sapphire LED (@1019mcd). These results indicate that the wafer bonding and laser lift-off techniques do not adversely affect the current-voltage characteristics of the LEDs. Furthermore, under high current injection, the GaN/mirror/Si LED presents the better performance due to the Si heat sink.

AB - This work reports a p-side-down GaN/mirror/Si light-emitting diode (LED) for vertical current injection fabricated by laser lift-off and wafer bonding techniques. The large area (1 mm×1 mm) GaN/mirror/Si LED with a platinum mirror presents a luminance intensity of 1456 mcd (@350mA) with a forward voltage of 3.96 V. The luminance intensity is two times in magnitude as compared with that of the original GaN/sapphire LED (456mcd, 4.2V @350mA). When the driving current increased to 1 A, the luminance intensity of GaN/mirror/Si LED achieved 2876 mcd, which was 2.8 times in magnitude as compared with that of the original planar GaN/sapphire LED (@1019mcd). These results indicate that the wafer bonding and laser lift-off techniques do not adversely affect the current-voltage characteristics of the LEDs. Furthermore, under high current injection, the GaN/mirror/Si LED presents the better performance due to the Si heat sink.

UR - http://www.scopus.com/inward/record.url?scp=31844435541&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:31844435541

SP - 140

EP - 151

T2 - 207th ECS Meeting

Y2 - 16 May 2005 through 20 May 2005

ER -

GaN-based light-emitting diodes for vertical current injection by laser lift-off and wafer bonding techniques

Abstract

Conference

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